IRFB7546 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.;
| 型号： | IRFB7546 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency. |
| 文件： | 总11页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFB7546PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
60V
RDS(on) typ.
max
6.0m
7.3m
ID
75A
Benefits
S
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRFB7546PbF
TO-220
Tube
50
IRFB7546PbF
24
20
16
12
8
80
60
40
20
0
I
= 45A
D
T
= 125°C
J
4
T
= 25°C
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFB7546PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
75
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
53
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
300
99
PD @TC = 25°C
W
W/°C
V
0.7
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
110
170
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.52
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
60
––– –––
V
VGS = 0V, ID = 250µA
–––
–––
–––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
46
6.0
7.5
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
7.3
–––
3.7
1.0
V
V
GS = 10V, ID = 45A
GS = 6.0V, ID = 23A
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
VGS(th)
VDS = VGS, ID = 100µA
V
V
V
V
DS =60 V, VGS = 0V
DS =60V,VGS = 0V,TJ =125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
nA
GS = -20V
–––
1.6
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 110µH, RG = 50, IAS = 45A, VGS =10V.
ISD 100A, di/dt 1260A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
R is measured at TJ approximately 90°C.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V
2
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IRFB7546PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
150
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
58
14
18
40
11
51
–––
87
S
VDS = 10V, ID = 45A
Qg
ID = 45A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
–––
–––
–––
–––
–––
VDS = 30V
VGS = 10V
nC
Qgd
Qsync
td(on)
tr
VDD = 30V
ID = 45A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
32
34
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3000
280
180
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
290
370
–––
–––
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
75
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
–––
–––
–––
300
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 45A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
7.9
29
32
33
40
1.9
––– V/ns TJ = 175°C,IS = 45A,VDS = 60V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 51V
IF = 45A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
3
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IRFB7546PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
Tj = 175°C
PULSE WIDTH
60µs
Tj = 25°C
PULSE WIDTH
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
1000
100
10
I
= 45A
D
V
= 10V
GS
T
= 175°C
T
= 25°C
J
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 45A
V
D
= C + C , C SHORTED
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
= 48V
= 30V
DS
C
= C + C
oss
ds
gd
V
DS
VDS= 12V
C
iss
6.0
C
oss
C
4.0
rss
2.0
0.0
100
0
10 20 30 40 50 60 70 80
, Total Gate Charge (nC)
0.1
1
10
100
Q
V
, Drain-to-Source Voltage (V)
G
DS
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Gate-to-Source Voltage
4
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IRFB7546PbF
1000
100
10
100µsec
100
10
OPERATION IN THIS AREA
1msec
LIMITED BY R (on)
T
= 175°C
DS
T
= 25°C
J
J
1
10msec
DC
1
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
0.1
0.4
0.7
1.0
1.3
1.6
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.5
78
Id = 1.0mA
76
74
72
70
68
66
64
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
40.0
VGS = 5.5V
35.0
30.0
25.0
20.0
15.0
10.0
5.0
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.0
0
50
I
100
150
200
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRFB7546PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
120
100
80
60
40
20
0
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
= 45A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFB7546PbF
15
12
9
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 30A
= 51V
F
V
R
T = 25°C
J
T = 125°C
J
6
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
3
0
0
200
400
600
800
1000
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
di /dt (A/µs)
T
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
15
12
9
300
I
= 45A
= 51V
F
I
= 30A
V = 51V
R
F
V
R
250
200
150
100
50
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
6
3
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
300
I
= 45A
= 51V
F
V
250
200
150
100
50
R
T = 25°C
J
T = 125°C
J
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFB7546PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFB7546PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
O
N
W
W
1 9 , 2 0 0 0
Y E A R
E E K 1 9
L IN E
0
=
2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
W
-
L O
T C O D E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB7546PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
Updated EAS (L =1mH) = 170mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V” on page 2
Updated package outline on page 9
11/7/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10 www.irf.com © 2014 International Rectifier
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
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Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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IRFB7730
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IRFB7734
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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