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IRFBC42-010 [INFINEON]

Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;

IRFBC42-010


元器件型号：	IRFBC42-010
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 局域网脉冲晶体管
PDF文件：	总1页 (文件大小：45K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFBC42-010参数

IRFBC42R

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-220AB

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12 ETC

IRFBE20

Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)

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210 IRF

IRFBE20

Power MOSFET

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65 VISHAY

IRFBE20PBF

Power MOSFET

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33 VISHAY

IRFBE20PBF

HEXFET Power MOSFET

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32 IRF

IRFBE22

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.6A I(D) | TO-220AB

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30 ETC

IRFBE22

Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRFBE22-006PBF

Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRFBE22-009

Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRFBE30

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

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1242 IRF

IRFBE30

Power MOSFET

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254 VISHAY

IRFBE30

Dynamic dV/dt Rating Repetitive Avalanche Rated

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40 KERSEMI

IRFBE30L

Power MOSFET

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31 VISHAY

IRFBE30L

HEXFET㈢ Power MOSFET

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63 IRF

IRFBE30LPBF

HEXFET Power MOSFET

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53 IRF

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