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IRFBE22-009 [INFINEON]

Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;

IRFBE22-009


元器件型号：	IRFBE22-009
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网脉冲晶体管
PDF文件：	总1页 (文件大小：45K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFBE22-009参数

IRFBE30

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

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1242 IRF

IRFBE30

Power MOSFET

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254 VISHAY

IRFBE30

Dynamic dV/dt Rating Repetitive Avalanche Rated

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40 KERSEMI

IRFBE30L

Power MOSFET

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31 VISHAY

IRFBE30L

HEXFET㈢ Power MOSFET

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63 IRF

IRFBE30LPBF

HEXFET Power MOSFET

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53 IRF

IRFBE30LPBF

Power MOSFET

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28 VISHAY

IRFBE30PBF

Power MOSFET

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152 VISHAY

IRFBE30PBF

Dynamic dV/dt Rating Repetitive Avalanche Rated

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26 KERSEMI

IRFBE30S

Power MOSFET

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27 VISHAY

IRFBE30S

HEXFET㈢ Power MOSFET

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65 IRF

IRFBE30SPBF

HEXFET Power MOSFET

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46 IRF

IRFBE30SPBF

Power MOSFET

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17 VISHAY

IRFBE30STRLPBF

Power MOSFET

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24 VISHAY

IRFBE30STRR

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

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