IRFBG22-011 [INFINEON]
Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | IRFBG22-011 |
| 厂家： | 
INFINEON TECHNOLOGIES AG |
| 描述： | Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 局域网 脉冲 晶体管 |
| 文件： | 总1页 (文件大小：45K) |
| 下载： | 下载PDF数据表文档文件 |
IRFBG30
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
715
IRF
IRFBG30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
279
VISHAY
IRFBG30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
69
KERSEMI
IRFBG30
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
IRF
IRFBG30-001PBF
Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBG30PBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
187
VISHAY
IRFBG32
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
86
ETC
IRFBG32
Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRFBG32-004PBF
Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBG32-005PBF
Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
INFINEON
IRFBL10N60A
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
64
ETC
IRFBL10N60A
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRFBL12N50A
HEXFET㈢ Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
IRF
IRFBL12N50A
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-263AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
24
ETC
IRFBL17N50L
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 17A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
23
ETC
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