IRFE9110 [INFINEON]
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18); 重复性雪崩和dv / dt评分HEXFET晶体管表面贴装（ LCC- 18 ）
| 型号： | IRFE9110 |
| 厂家： | 
Infineon |
| 描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| 文件： | 总7页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91721C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
IRFE9110
SURFACE MOUNT (LCC-18)
100V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFE9110 -100V 1.2Ω
ID
-2.5A
LCC-18
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board den-
sity. International Rectifier has engineered the LCC pack-
age to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
Features:
n Surface Mount
n Small Footprint
n Alternative to TO-39 Package
n Hermetically Sealed
n Dynamic dv/dt Rating
n Avalanche Energy Rating
n Simple Drive Requirements
n Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C
Continuous Drain Current
-2.5
D
GS
C
A
I
= -10V, T = 100°C Continuous Drain Current
-1.6
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
-10
DM
@ T = 25°C
P
15
W
W/°C
V
D
C
0.12
V
GS
Gate-to-SourceVoltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
102
mJ
AS
I
-
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
-
mJ
AR
dv/dt
-14
V/ns
T
-55 to 150
J
T
STG
StorageTemperature Range
oC
g
Pckg. Mounting Surface Temp.
Weight
300 (for 5 S)
0.42(typical)
For footnotes refer to the last page
www.irf.com
1
10/03/01
IRFE9110
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
-0.08
DSS
J
D
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.2
1.38
-4.0
—
V
V
= -10V, I = -1.6A➀
GS D
DS(on)
Ω
= -10V, I = -2.5A ➀
GS
D
V
GateThresholdVoltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
0.9
—
V
V
= V , I = -250µA
GS(th)
DS
GS
D
Ω
g
S ( )
V
DS
> -15V, I
= -1.6A➀
fs
DS
I
-25
V = -80V,V = 0V
DS GS
DSS
µA
nA
nC
—
-250
V
=-80V
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
15
7.0
8.0
30
V
=-20V
=20V
GSS
GSS
GS
GS
I
V
Q
V
=-10V, ID -2.5A
GS =
g
Q
gs
Q
gd
V
DS
=-50V
t
V
V
=-50V, I = -2.5A,
d(on)
DD
GS
D
t
t
60
=-10V, R =7.5Ω
r
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
40
d(off)
t
40
—
f
L
S +
L
D
nH
Measured from the center of
drain pad to center of source
pad
C
Input Capacitance
—
—
—
214
100
20
V
= 0V,V
= -25V
iss
GS
DS
f = 1.0MHz
C
oss
C
rss
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
Source-DrainDiodeRatingsandCharacteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
-2.5
-10
S
A
I
Pulse Source Current (Body Diode) ➀
SM
V
Diode ForwardVoltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.5
200
380
V
nS
µc
T = 25°C, I = -2.5A, V
= 0V ➀
j
SD
S
GS
t
T = 25°C, I = -2.5A, di/dt ≤-100A/µs
j
rr
F
Q
V
DD
≤ -50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction to Case
—
—
—
—
8.3
27
thJC
°C/W
R
Junction to PC Board
Soldered to a copper clad PC board
thJ-PCB
For footnotes refer to the last page
2
www.irf.com
IRFE9110
100
10
1
100
10
1
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM-4.5V
BOTTOM-4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
10
2.5
-2.6A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
V
= -50V
DS
20µs PULSE WIDTH
V
= -10V
GS
0.1
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFE9110
400
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I = -2.5 A
D
GS
C
= C + C
C
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
oss
gd
300
200
100
C
iss
C
C
oss
4
FOR TEST CIRCUIT
rss
SEE FIGURE 13
0
0
1
0
4
8
12
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
1
J
1ms
°
T = 25 C
J
10ms
°
= 25 C
T
C
°
T
= 150 C
J
Single Pulse
V
= 0 V
GS
0.1
0.1
0.0
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFE9110
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
1
0.05
0.02
0.01
SINGLE PULSE
P
DM
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
C
thJC
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFE9110
L
V
DS
300
200
100
0
I
D
D.U.T
R
TOP
1.1A
1.6A
BOTTOM 2.5A
G
V
DD
A
I
AS
DRIVER
-
VGS
0.01
t
Ω
p
-
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
t
p
Vs. DrainCurrent
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFE9110
Foot Notes:
➀➀ I ≤ -2.5A, di/dt ≤− 285A/µs,
SD
➀➀Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
DD
≤ -100V, T ≤ 150°C
J
Suggested RG =7.5 Ω
➀➀➀V
=-25V, starting T = 25°C,
DD
J
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = -2.5A, V
GS
=- 10V
L
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/01
www.irf.com
7
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