IRFE9220SCXPBF [INFINEON]
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18;
| 型号： | IRFE9220SCXPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 晶体 晶体管 功率场效应晶体管 局域网 |
| 文件： | 总7页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93990
IRFE9220
JANTX2N6847U
JANTXV2N6847U
REPETITIVEAVALANCHEANDdv/dtRATED
HEXFET TRANSISTORS
SURFACE MOUNT (LCC-18)
[REF:MIL-PRF-19500/563]
200V, P-CHANNEL
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFE9220
-200V
1.5Ω
-2.1A
LCC-18
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board den-
sity. International Rectifier has engineered the LCC pack-
age to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
Features:
!
!
!
!
!
!
!
!
Surface Mount
Small Footprint
Alternative to TO-39 Package
Hermetically Sealed
Dynamic dv/dt Rating
Avalanche Energy Rating
Simple Drive Requirements
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-2.1
-1.5
-8.4
14
D
GS
C
A
I
D
= -10V, T = 100°C Continuous Drain Current
C
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.11
±20
180
-
V
GS
Gate-to-Source Voltage
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
-
mJ
AR
dv/dt
-5.0
-55 to 150
V/ns
T
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5 S)
0.42(typical)
For footnotes refer to the last page
www.irf.com
1
10/25/00
IRFE9220
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
Reference to 25°C, I = -1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
-0.22
V/°C
DSS
J
D
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.5
1.725
- 4.0
—
V
V
= -10V, I = -1.5A➀
GS D
DS(on)
Ω
V
GS
= -10V, I = -2.1A ➀
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
1.0
—
V
= V , I = -250µA
GS
GS(th)
DS
D
Ω
g
S ( )
V
> -15V, I =-1.5A➀
fs
DS
DS
I
-25
V = -160V, V = 0V
DS GS
DSS
µA
nA
nC
—
-250
V
=-160V
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
15
V
=-20V
=20V
GSS
GSS
GS
I
V
GS
Q
Q
Q
V
=-10V, ID -2.1A
GS =
g
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
3.2
8.4
50
V
DS
=-100V
gs
gd
d(on)
r
t
t
V
DD
=-100V, I = -2.1A,
D
70
R =7.5Ω
G
n s
t
Turn-Off Delay Time
Fall Time
40
d(off)
t
f
50
L
L
Total Inductance
—
nH
S +
D
Measured from the center of
drain pad to center of source
pad
C
C
C
Input Capacitance
—
—
—
330
100
33
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
—
—
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
-2.1
-8.4
S
A
I
Pulse Source Current (Body Diode) ➀
SM
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.8
300
3.0
V
nS
µc
T = 25°C, I = -2.1A, V
= 0V ➀
j
SD
S
GS
t
T = 25°C, I = -2.1A, di/dt ≤-100A/µs
j
rr
F
Q
RR
V
DD
≤ -50V ➀
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction to Case
—
—
—
—
9.1
26" " "
thJC
°C/W
Junction to PC Board
Soldered to a copper clad PC board
thJ-PCB
For footnotes refer to the last page
2
www.irf.com
IRFE9220
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFE9220
13 a& b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFE9220
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFE9220
L
V
DS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
--1200VV
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
Fig 12c. Maximum Avalanche Energy
t
p
Vs. Drain Current
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFE9220
Foot Notes:
➀➀ I ≤ -2.1A, di/dt ≤ -95A/µs,
SD
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
DD
≤-200V, T ≤ 150°C
J
Suggested RG =7.5 Ω
➀➀➀V
= -50V, starting T = 25°C,
DD
J
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = -2.1A,
L
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
www.irf.com
7
相关型号：
IRFEA240PBF
Power Field-Effect Transistor, 11A I(D), 200V, 0.18ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28
INFINEON
IRFF014
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF014PBF
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
IRFF034
Power Field-Effect Transistor, 16.2A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
©2020 ICPDF网 联系我们和版权申明