IRFE9230 [INFINEON]
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18); 重复性雪崩和dv / dt评分HEXFET晶体管表面贴装（ LCC- 18 ）
| 型号： | IRFE9230 |
| 厂家： | 
Infineon |
| 描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91717B
IRFE9230
JANTX2N6851U
JANTXV2N6851U
REPETITIVEAVALANCHEANDdv/dtRATED
HEXFET TRANSISTORS
SURFACE MOUNT (LCC-18)
[REF:MIL-PRF-19500/564]
200V, P-CHANNEL
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFE9230
-200V
0.80Ω
-4.0A
LCC-18
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board den-
sity. International Rectifier has engineered the LCC pack-
age to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
Features:
!
!
!
!
!
!
!
!
Surface Mount
Small Footprint
Alternative to TO-39 Package
Hermetically Sealed
Dynamic dv/dt Rating
Avalanche Energy Rating
Simple Drive Requirements
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
= -10V, T = 100°C Continuous Drain Current
C
-4.0
-2.4
-16
D
D
GS
GS
C
A
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
25
W
W/°C
V
mJ
A
mJ
V/ns
D
C
0.20
±20
171
-
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
GS
E
AS
I
E
AR
-
AR
dv/dt
-1.1
-55 to 150
T
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5 S)
0.42(typical)
For footnotes refer to the last page
www.irf.com
1
01/17/01
IRFE9230
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
Reference to 25°C, I = -1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
-0.21
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
2.2
—
—
—
—
—
—
—
0.80
1.68
-4.0
—
V
= -10V, I = -2.4A➀
GS D
DS(on)
Ω
V
= -10V, I = -4.0A ➀
GS
DS
DS
D
V
V
S ( )
V
V
= V , I = -250µA
GS(th)
GS
D
Ω
g
DSS
> -15V, I
= -2.4A➀
fs
DS
I
-25
V
= -160V, V = 0V
DS
GS
µA
nA
nC
—
-250
V
DS
=-160V
V
= 0V, T = 125°C
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
35
6.1
21
50
100
80
V
V
=-20V
=20V
GSS
GSS
GS
GS
V
=-10V, ID -4.0A
g
gs
GS =
V
DS
=-100V
gd
d(on)
r
d(off)
t
t
t
t
V
DD
=-100V, I = --4.0A,
D
R =7.5Ω
G
n s
80
—
f
L
L
nH
S +
D
Measured from the center of
drain pad to center of source
pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
700
200
45
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
-4.0
-16
S
A
I
SM
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.6
400
4.0
V
nS
µc
T = 25°C, I = -4.0A, V
= 0V ➀
j
SD
S
GS
t
T = 25°C, I = -4.0A, di/dt ≤-100A/µs
j
rr
F
Q
V
≤ -50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction to Case
Junction to PC Board
—
—
—
—
5.0
19" " "
thJC
thJ-PCB
°C/W
Soldered to a copper clad PC board
For footnotes refer to the last page
2
www.irf.com
IRFE9230
100
10
1
100
10
1
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM-4.5V
BOTTOM-4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-4.0A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
10
°
T = 150 C
J
V
= -50V
DS
V
= -10V
GS
20µs PULSE WIDTH
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
T , Junction Temperature ( C)
-V , Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFE9230
20
16
12
8
1400
1200
1000
800
I
D
= -4.0 A
V
= 0V,
f = 1MHz
GS
C
= C + C
gs
C
SHORTED
iss
gd , ds
V
V
V
= 160V
= 100V
= 40V
C
= C
gd
DS
DS
DS
rss
C
= C + C
ds
oss
gd
C
iss
600
400
C
C
oss
4
200
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
10
0
5
10
15
20
25 30
35
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
°
T = 25 C
J
1ms
10ms
°
= 25 C
T
J
C
°
= 150 C
T
V
= 0 V
Single Pulse
GS
0.1
0.1
1
10
100
1000
1.0
2.0
3.0
4.0
5.0
-V , Drain-to-Source Voltage (V)
-V ,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFE9230
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
25
50
75
100
125
150
10%
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
SINGLE PULSE
0.1
t
1
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
x Z
2. Peak T = P
J
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
10V
IRFE9230
L
V
500
400
300
200
100
0
DS
I
-
D
-.8A
TOP
11.8A
-2-.5A
D.U.T
R
G
V
DD
-4.0A
BOTTOM 4
I
A
AS
DRIVER
-10V
-20V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
t
p
Vs. Drain Current
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFE9230
Foot Notes:
➀➀ I ≤ -4.0A, di/dt ≤− 600A/µs,
SD
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
DD
≤ -200V, T ≤ 150°C
J
Suggested RG =7.5 Ω
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀V
DD
=-50V, starting T = 25°C,
J
L
Peak I = -4.0A,
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice.1/01
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7
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