IRFH4257DPBF [INFINEON]
Control and synchronous MOSFETs in one package;
| 型号： | IRFH4257DPBF |
| 厂家： | 
Infineon |
| 描述： | Control and synchronous MOSFETs in one package |
| 文件： | 总12页 (文件大小：861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH4257DPbF
HEXFET® Power MOSFET
Q1
25
Q2
25
VDSS
V
RDS(on) max
(@VGS = 4.5V)
4.70
9.7
1.80
23
m
nC
Qg (typical)
ID
25
25
A
(@TC = 25°C)
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
Features
Benefits
Control and synchronous MOSFETs in one package
Increased power density
Lower switching losses
Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Low charge control MOSFET (9.7nC typical)
results in
Low RDSON synchronous MOSFET (<1.8m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFH4257DTRPbF
Form
Quantity
4000
IRFH4257DPbF
Dual PQFN 5mm x 4mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Q1 Max.
Q2 Max.
Units
VGS
± 20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
68
54
111
88
ID @ TC = 70°C
ID @ TC = 25°C
A
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
25
25
IDM
Pulsed Drain Current
Power Dissipation
Power Dissipation
120
25
375
28
PD @TC = 25°C
PD @TC = 70°C
W
W/°C
°C
16
18
Linear Derating Factor
0.20
0.22
TJ
Operating Junction and
Storage Temperature Range
-55 to + 150
TSTG
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
Junction-to-Case
5.0
33
45
30
4.5
26
40
27
RJC (Bottom)
RJC (Top)
RJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
Notes through are on page 12
1
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IRFH4257DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Q1
Q2
Q1
25
25
–––
––– –––
––– –––
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
V
Breakdown Voltage Temp. Coefficient
22
–––
BVDSS/TJ
mV/°C
Q2
Q1
Q2
–––
–––
–––
22
2.7
1.1
–––
3.4
1.4
Reference to 25°C, ID = 10mA
VGS = 10V, ID = 25A
VGS = 10V, ID = 25A
RDS(on)
Static Drain-to-Source On-Resistance
m
Q1
Q2
Q1
Q2
Q1
–––
–––
1.1
3.7
1.4
1.6
1.6
4.7
1.8
2.1
2.1
VGS = 4.5V, ID = 25A
VGS = 4.5V, ID = 25A
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Q1: VDS = VGS, ID = 35µA
VGS(th)
Gate Threshold Voltage
V
1.1
Gate Threshold Voltage Coefficient
––– -5.4 –––
VGS(th)/TJ
mV/°C
µA
Q2
––– -5.3 –––
Q2: VDS = VGS, ID = 1mA
Q1
Q2
Q1
––– ––– 1.0
––– ––– 250
––– ––– 100
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
VGS = 20V
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Q2
Q1
Q2
––– ––– 100
––– ––– -100
––– ––– -100
VGS = 20V
IGSS
nA
S
VGS = -20V
Gate-to-Source Reverse Leakage
Forward Transconductance
VGS = -20V
gfs
Qg
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
100 ––– –––
138 ––– –––
VDS = 10V, ID = 25A
VDS = 10V, ID = 25A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.7
23
15
35
Q1
VDS = 13V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
2.4 –––
5.1 –––
1.2 –––
2.6 –––
3.4 –––
7.6 –––
2.7 –––
7.7 –––
4.6 –––
VGS = 4.5V, ID = 25A
nC
Q2
VDS = 13V
VGS = 4.5V, ID = 25A
––– 10.2 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
25
–––
–––
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.4 –––
0.7 –––
8.2 –––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Q1
VDS = 13V VGS = 4.5V
ID = 25A, Rg = 1.8
12
47
51
12
20
20
25
–––
–––
–––
–––
–––
–––
–––
ns
Q2
Turn-Off Delay Time
Fall Time
VDS = 13V VGS = 4.5V
ID = 25A, Rg = 1.8
Ciss
Input Capacitance
––– 1321 –––
V
GS = 0V
Q2
Q1
Q2
Q1
Q2
––– 3161 –––
––– 365 –––
––– 965 –––
––– 101 –––
––– 237 –––
VDS = 13V
Coss
Crss
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
2
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IRFH4257DPbF
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Q1 Max.
Q2 Max.
Units
EAS
–––
42
387
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
––– ––– 25
––– ––– 25
––– ––– 120
––– ––– 375
––– ––– 1.0
––– ––– 0.75
A
A
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
VSD
trr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
18
30
16
37
–––
–––
ns Q1 TJ = 25°C, IF = 25A
DD = 13V, di/dt = 200A/µs
V
Qrr
––– nC Q2 TJ = 25°C, IF = 25A
–––
VDD = 13V, di/dt = 200A/µs
3
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IRFH4257DPbF
Q2 - Synchronous FET
Q1 - Control FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
60µs PULSE WIDTH
1
60µs PULSE WIDTH
Tj = 25°C
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.5V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
1000
100
10
1
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
1
V
= 15V
V
= 15V
DS
DS
60µs PULSE WIDTH
60µs PULSE WIDTH
0.1
0.1
1.0
1.5
2.0
2.5
3.0
3.5
1.0
1.5
2.0
2.5 3.0 3.5
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 5. Typical Transfer Characteristics
4
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IRFH4257DPbF
Q2 - Synchronous FET
Q1 - Control FET
100000
10000
1000
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
V
C
= 0V,
f = 1 MHZ
GS
GS
= C + C , C SHORTED
= C + C , C SHORTED
iss
gs
gd ds
iss
gs
gd ds
C
= C
C
= C
rss
gd
rss
gd
C
= C + C
C
= C + C
oss
ds
gd
oss
ds
gd
C
iss
C
iss
C
oss
C
oss
C
rss
C
rss
100
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
14.0
I = 25A
D
I
= 25A
V
D
12.0
12.0
10.0
8.0
=20V
V
V
= 20V
= 13V
DS
DS
DS
V
= 13V
DS
10.0
8.0
6.0
4.0
2.0
0.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
0
10
20
30
40
50
60
Q , Total Gate Charge (nC)
Q , Total Gate Charge (nC)
G
G
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
OPERATION IN THIS AREA
OPERATION IN THIS AREA
LIMITED BY R
(on)
1000
100
10
LIMITED BY R (on)
DS
DS
100
10
100µsec
1msec
Limited by
Package
100µsec
Limited by Package
1
1msec
10msec
DC
1
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
5
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IRFH4257DPbF
Q2 - Synchronous FET
Q1 - Control FET
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 25A
I
= 25A
D
D
V
= 4.5V
V
= 4.5V
GS
GS
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
, Junction Temperature (°C)
J
J
Fig 14. Normalized On-Resistance vs. Temperature
Fig 13. Normalized On-Resistance vs. Temperature
1000
1000
100
100
T
= 150°C
J
T
= 150°C
J
T
V
= 25°C
= 0V
T
= 25°C
J
J
10
10
V
= 0V
GS
GS
1.0
1.0
0.3
0.5
0.7
0.9
1.1
0.2
0.4
0.6
0.8
1.0
1.2
V
, Source-to-Drain Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
SD
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
12
6
I
= 25A
I
= 25A
D
D
10
8
5
4
3
2
1
0
6
T
= 125°C
J
T
= 125°C
= 25°C
J
4
2
T
T
= 25°C
J
J
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
V
Gate -to -Source Voltage (V)
V
Gate -to -Source Voltage (V)
GS,
GS,
Fig 17. Typical On-Resistance vs. Gate Voltage
Fig 18. Typical On-Resistance vs. Gate Voltage
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IRFH4257DPbF
Q2 - Synchronous FET
Q1 - Control FET
120
100
80
60
40
20
0
70
60
50
40
30
20
10
0
Limited By Package
Limited By Package
25
50
75
100
125
150
25
50
75
100
125
150
T
, Case Temperature (°C)
T
, Case Temperature (°C)
C
C
Fig 20. Maximum Drain Current vs. Case Temperature
Fig 19. Maximum Drain Current vs. Case Temperature
2.0
2.2
2.0
1.8
1.6
1.8
1.6
1.4
1.2
1.0
0.8
I
= 35µA
D
I
= 1.0mA
D
1.4
1.2
1.0
0.8
-75 -50 -25
0
25 50 75 100 125 150
-75 -50 -25
0
25 50 75 100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
180
1600
I
D
I
160
140
120
100
80
D
1400
1200
1000
800
600
400
200
0
TOP
3.4A
7.0A
BOTTOM 25A
TOP
6.1A
10A
BOTTOM 25A
60
40
20
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Starting T , Junction Temperature (°C)
J
J
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
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IRFH4257DPbF
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 25. Typical Avalanche Current vs. Pulse Width (Q1)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 26. Typical Avalanche Current vs. Pulse Width (Q2)
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1 10
1
t
, Rectangular Pulse Duration (sec)
1
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
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IRFH4257DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
9
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IRFH4257DPbF
Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 30a. Unclamped Inductive Test Circuit
Fig 30b. Unclamped Inductive Waveforms
Fig 31a. Switching Time Test Circuit
Fig 31b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 32a. Gate Charge Test Circuit
Fig 32b. Gate Charge Waveform
10
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IRFH4257DPbF
Dual PQFN 5x4 Package Details
Dual PQFN 5x4 Part Marking
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH4257DPbF
Dual PQFN 5x4 Outline Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 4 PQFN
13
4000
12.4
5.300
4.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification level
(per JEDEC JESD47F †† guidelines )
MSL1
DUAL PQFN 5mm x 4mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C,
Q1: L = 0.13mH, RG = 50, IAS = 25A;
Q2: L = 1.24mH, RG = 50, IAS = 25A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to Q1 = 25A & Q2 = 25A by source bonding technology.
Pulsed drain current is limited to 100A by source bonding technology.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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