IRFH5007PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH5007PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95958
IRFH5007PbF
HEXFET® Power MOSFET
VDS
75
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
5.9
m
Ω
65
nC
RG (typical)
1.2
Ω
ID
100
A
PQFN 5X6 mm
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Benefits
Features
Low RDSon (≤ 5.9mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Lower Conduction Losses
Enables Better Thermal Dissipation
Increased Reliability
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
1000
IRFH5007TRPBF
IRFH5007TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
75
Units
VDS
V
VGS
±20
17
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
13
100
88
A
400
3.6
250
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
Power Dissipation
Linear Derating Factor
0.029
-55 to + 150
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 8
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1
03/12/10
IRFH5007PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
75 ––– –––
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
∆Β
/ T
∆
J
DSS
RDS(on)
VGS(th)
∆VGS(th)
IDSS
–––
2.0
5.1
–––
-8.4
–––
–––
–––
5.9
4.0
VGS = 10V, ID = 50A
mΩ
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
––– mV/°C
20
µA
VDS = 75V, VGS = 0V
250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
V
V
GS = 20V
––– -100
GS = -20V
gfs
Qg
–––
65
–––
98
S
DS = 15V, ID = 50A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
11
–––
–––
–––
VDS = 38V
VGS = 10V
4.5
20
nC
ID = 50A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
––– 29.5 –––
––– 24.5 –––
See Fig.17 & 18
–––
21
–––
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.2
10
14
30
11
–––
–––
–––
–––
–––
Ω
V
DD = 38V, VGS = 10V
ID = 50A
R =1.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
G
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4290 –––
VGS = 0V
–––
–––
510
210
–––
–––
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
250
50
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
MOSFET symbol
–––
–––
–––
–––
100
400
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
31
1.3
47
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 38V
di/dt = 500A/µs
nC
Qrr
ton
170
255
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
0.5
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
°C/W
35
RθJA (<10s)
22
2
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IRFH5007PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
3.75V
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
3.75V
BOTTOM
BOTTOM
3.75V
1
3.75V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
I
= 50A
D
V
= 10V
GS
100
10
1
T
= 150°C
T
= 25°C
J
J
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
V
V
V
= 60V
= 38V
= 15V
rss
oss
gd
DS
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
0
20
Q
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
, Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH5007PbF
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100µsec
1msec
T
= 150°C
J
100
10
1
T
= 25°C
10msec
J
DC
Tc = 25°C
Tj = 150°C
V
GS
= 0V
Single Pulse
0.1
1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
150
4.0
Limited By Package
125
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
75
50
25
0
I
I
I
I
= 150µA
= 500µA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
, Temperature ( °C )
J
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case(Bottom)Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5007PbF
16
14
12
10
8
1100
1000
900
800
700
600
500
400
300
200
100
0
I
= 50A
I
D
D
TOP
6.6A
13A
BOTTOM 50A
T
= 125°C
J
T
= 25°C
J
6
4
2
4
6
8
10
12 14 16
18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5007PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5007PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5007PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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相关型号：
IRFH5015
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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