IRFH5015 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFH5015
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IRFH5015PbF

HEXFET^®Power MOSFET

V_DS

150

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

mΩ

R_{G (typical)}

1.7

I_D

PQFN 5X6 mm

(@T_mb= 25°C)

Applications

• Primary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• BoostConverters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 31 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Lower Conduction Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFH5015PBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5015TRPBF

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

150

± 20

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_mb= 25°C

I_D@ T_mb= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.2

220

3.6

156

Power Dissipation

P_D@T_A= 25°C

P_D@ T_mb= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through ꢀ are on page 9

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IRFH5015PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

150

–––

V_GS= 0V, I_D= 250uA

ΔΒV_DSS/ΔT_J

R_DS(on)

V_GS(th)

0.12 ––– V/°C Reference to 25°C, I_D= 1.0mA

––– 25.5

V_GS= 10V, I_D= 34A

V_DS= V_GS, I_D= 150μA

V_DS= 150V, V_GS= 0V

3.0

–––

-12

5.0

ΔV_GS(th)

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

–––

μA

250

_DS= 150V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

––– -100

gfs

Q_g

–––

V_DS= 50V, I_D= 34A

–––

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

–––

V_DS= 75V

4.6

_GS= 10V

I_D= 34A

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

7.4

––– 15.6 –––

–––

V_DS= 16V, V_GS= 0V

R_G

t_d(on)

t_r

Gate Resistance

Turn-On Delay Time

Rise Time

–––

1.7

9.4

9.7

–––

V_DD= 75V, V_GS= 10V

I_D= 34A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R =1.3

3.4

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 2300 –––

V_GS= 0V

–––

205

–––

V_DS= 50V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

Typ.

–––

Max.

230

Units

Single Pulse Avalanche Energy

E_AS

I_AR

Avalanche Current

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

–––

I_SM

220

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

–––

1.3

T_J= 25°C, I_S= 34A, V_GS= 0V

ns T_J= 25°C, I_F= 34A, V_DD= 75V

di/dt = 500A/μs

Q_rr

t_on

550

825

Time is dominated by parasitic Inductance

Thermal Resistance

Parameter

Typ.

0.5

Max.

0.8

Units

R_θ

JC-mb

Junction-to-Mounting Base

Junction-to-Case

R_θ_JC(Top)

–––

°C/W

Junction-to-Ambient

R_θ

R_θ_JA(<10s)

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IRFH5015PbF

1000

100

1000

100

VGS

15V

10V

9.0V

8.0V

7.0V

6.0V

5.5V

5.0V

VGS

15V

10V

9.0V

8.0V

7.0V

6.0V

5.5V

5.0V

TOP

BOTTOM

5.0V

60μs PULSE WIDTH

Tj = 25°C

≤

0.1

0.01

60μs PULSE WIDTH

Tj = 150°C

≤

5.0V

0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

2.5

= 34A

= 10V

2.0

1.5

1.0

0.5

0.0

100

= 150°C

= 25°C

= 50V

≤

60μs PULSE WIDTH

0.1

10 12 14

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

= 0V,

= C

f = 1 MHZ

I = 34A

+ C , C

SHORTED

iss

= 120V

= 75V

= 30V

= C

rss

oss

= C + C

10000

1000

100

iss

oss

rss

100

1000

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFH5015PbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 150°C

= 25°C

100μsec

10msec

1msec

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

100

1000

0.2

0.4

0.6

0.8

1.0

1.2

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

6.0

5.5

5.0

4.5

4.0

= 150μA

= 250μA

= 1.0mA

= 1.0A

3.5

3.0

2.5

2.0

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Case Temperature (°C)

T , Temperature ( °C )

Fig 9. Maximum Drain Current vs.

Fig 10. Threshold Voltage vs. Temperature

CaseTemperature

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

0.0001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base

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IRFH5015PbF

100

1000

900

800

700

600

500

400

300

200

100

= 34A

TOP

3.7A

7.9A

BOTTOM 34A

= 125°C

= 25°C

9 10 11 12 13 14 15 16 17 18 19 20

Gate -to -Source Voltage (V)

100

125

150

Starting T , Junction Temperature (°C)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 125°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 125°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs. Pulsewidth

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IRFH5015PbF

Driver Gate Drive

P.W.

Period

D =

D.U.T

=10V

CircuitLayoutConsiderations

• LowStrayInductance

• Ground Plane

• LowLeakageInductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_DS

V_GS

D.U.T.

R_G

V_DD

10%

V_GS

10V

V_GS

PulseWidth ≤ 1 µs

DutyFactor≤ 0.1

t_d(on)

t_d(off)

t_r

t_f

Fig 17b. Switching Time Waveforms

Fig 17a. Switching Time Test Circuit

Vds

Vgs

VCC

DUT

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

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IRFH5015PbF

PQFN 5x6 Outline "B" Package Details

PQFN 5x6 Outline "G" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application noteAN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRFH5015PbF

PQFN 5x6 Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

XYWWX

XXXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Tape and Reel

REEL DIMENSIONS

TAPE DIMENSIONS

CODE

DESCRIPTION

Dimension des ign to accommodate the component width

Dimens ion des ign to accommodate the component lenght

Dimension des ign to accommodate the component thicknes s

Overall wi dth of the carrier tape

Pitch between s ucces sive cavity centers

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Note: All dimens ion are nominal

Package

Type

Reel

Diameter

(Inch)

QTY

Reel

Width

Pin 1

(mm)

Quadrant

(mm)

5 X 6 PQFN

4000

12.4

6.300

5.300

1.20

8.00

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Ma1y9, 2015

IRFH5015PbF

Qualification information^†

Industrial^††

(per JEDEC JES D47F ^†††guidelines )

MS L 1

Qualification level

Moisture Sensitivity Level

RoHS compliant

PQFN 5mm x 6mm

(per JEDEC J-ST D-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.41mH, R_G= 25Ω, I_AS= 34A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

Revision History

Date

Comment

• Updated package outline for “option B” and added package outline for “option G” on page 7

4/28/2015

• Updated tape and reel on page 8.

• Updated package outline for “option G” on page 7.

• Updated "IFX logo" on page 1 and page 9.

5/19/2015

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/

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IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFH5015 [INFINEON]

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