IRFH5204PBF [INFINEON]
Secondary Side Synchronous Rectification, Inverters for DC Motors; 次级侧同步整流，逆变器的直流电动机
| 型号： | IRFH5204PBF |
| 厂家： | 
Infineon |
| 描述： | Secondary Side Synchronous Rectification, Inverters for DC Motors |
| 文件： | 总8页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96346A
IRFH5204PbF
HEXFET® Power MOSFET
VDS
40
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
4.3
m
Ω
43
nC
RG (typical)
1.7
Ω
ID
PQFN 5X6 mm
100
A
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
FeaturesandBenefits
Features
Benefits
Low RDSon (< 4.3 mΩ)
Low Thermal Resistance to PCB (< 1.2°C/W)
100% Rg tested
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH5204TRPBF
IRFH5204TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
40
Units
VDS
V
VGS
± 20
22
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
18
100
100
400
3.6
A
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
W/°C
°C
Power Dissipation
105
Linear Derating Factor
0.029
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 8
www.irf.com
1
08/30/11
IRFH5204PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250uA
0.05 ––– V/°C Reference to 25°C, ID = 1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
2.0
3.6
–––
-9.3
–––
–––
–––
4.3
4.0
VGS = 10V, ID = 50A
m
V
Ω
VGS(th)
VDS = VGS, ID = 100μA
V
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
96
––– mV/°C
GS(th)
IDSS
20
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
VGS = -20V
gfs
Qg
–––
43
–––
65
S
VDS = 15V, ID = 50A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
9.1
4.0
14
–––
–––
–––
–––
–––
–––
VDS = 20V
Qgs2
Qgd
V
GS = 10V
nC
ID = 50A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
16
Qsw
18
Qoss
18
nC
V
V
DS = 16V, VGS = 0V
DD = 20V, VGS = 10V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.7
8.4
14
–––
–––
–––
–––
–––
Ω
ID = 50A
R =1.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
18
Ω
G
8.3
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2460 –––
VGS = 0V
–––
–––
515
250
–––
–––
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
102
50
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
––– 100
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
400
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
30
1.3
45
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 20V
di/dt = 500A/μs
Qrr
ton
128
192
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
35
JA
RθJA (<10s)
22
2
www.irf.com
IRFH5204PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
7.00V
6.00V
5.50V
5.00V
4.75V
4.50V
TOP
TOP
10V
7.00V
6.00V
5.50V
5.00V
4.75V
4.50V
BOTTOM
BOTTOM
1
4.5V
4.5V
0.1
0.01
60μs
Tj = 150°C
60μs
Tj = 25°C
PULSE WIDTH
≤
PULSE WIDTH
≤
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
V
J
= 15V
DS
≤
60μs PULSE WIDTH
0.1
3
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
V
= 0V,
= C
f = 1 MHZ
I = 50A
D
GS
V
V
= 32V
= 20V
C
C
C
+ C , C
SHORTED
DS
DS
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
VDS= 8V
ds
gd
10000
1000
100
C
iss
C
C
oss
6
rss
4
2
0
10
0
10
20
30
40
50
60
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
www.irf.com
3
IRFH5204PbF
1000
100
10
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
T
= 150°C
100μsec
J
100
10
1
T
= 25°C
J
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0.10
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
125
Limited By Package
100
75
50
25
0
I
= 1.0A
D
ID = 1.0mA
ID = 500μA
ID = 150μA
ID = 100μA
-75 -50 -25
T
0
25 50 75 100 125 150
25
50
T
75
100
125
150
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com
IRFH5204PbF
12
10
8
450
400
350
300
250
200
150
100
50
I
= 50A
I
D
D
TOP
6.9A
16A
BOTTOM 50A
T
J
= 125°C
J
6
4
T
= 25°C
2
0
0
4
6
8
10 12 14 16
18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
www.irf.com
5
IRFH5204PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
www.irf.com
IRFH5204PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRFH5204PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.081mH, RG = 50Ω, IAS = 50A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2011
8
www.irf.com
相关型号：
IRFH5206TR2PBF
Power Field-Effect Transistor, 16A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH5206TRPBF
Power Field-Effect Transistor, 16A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
©2020 ICPDF网 联系我们和版权申明