IRFH5206PBF_技术文档

PD -97466

IRFH5206PbF

HEXFET^®Power MOSFET

V_DS

60

V

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

6.7

m

40

1.7

nC

R_{G (typical)}

I_D

89

A

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Features

Benefits

Low R_DSon(≤ 7.0mΩ at Vgs=10V)

Low Thermal Resistance to PCB (≤ 1.2°C/W)

100% Rg tested

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5206TRPBF

IRFH5206TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

60

Units

V_DS

V

V_GS

± 20

16

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

13

89

A

56

350

3.6

100

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W

Power Dissipation

Linear Derating Factor (Bottom)

Operating Junction and

0.83

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through are on page 8

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1

3/15/10

IRFH5206PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

60 ––– –––

––– 0.07 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250μA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V

ΔΒV_DSS/ΔT_J

R_DS(on)

V_GS(th)

–––

2.0

5.6

–––

-9.7

–––

6.7

4.0

V_GS= 10V, I_D= 50A

m

Ω

V

V_DS= V_GS, I_D= 100μA

ΔV_GS(th)

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

73

––– mV/°C

20

μA

V_DS= 60V, V_GS= 0V

250

V_DS= 60V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

nA

V

_GS= 20V

_GS= -20V

––– -100

V

gfs

–––

40

–––

60

S

V_DS= 25V, I_D= 50A

Q_g

–––

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

6.2

3.4

12

–––

V

_DS= 30V

_GS= 10V

V

nC

I_D= 50A

––– 18.4 –––

––– 15.4 –––

See Fig.17 & 18

–––

14

1.7

6.4

11

–––

nC V_DS= 16V, V_GS= 0V

Gate Resistance

Ω

–––

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

V

_DD= 30V, V_GS= 10V

I_D= 50A

R =1.8

Rise Time

–––

ns

Turn-Off Delay Time

22

Ω

G

Fall Time

8.2

See Fig.15

C_iss

C_oss

C_rss

Input Capacitance

––– 2490 –––

V

_GS= 0V

Output Capacitance

–––

360

160

–––

pF

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

–––

Max.

87

Units

mJ

E_AS

I_AR

Avalanche Current

50

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

D

S

–––

89

(Body Diode)

Pulsed Source Current

showing the

integral reverse

A

I_SM

G

–––

350

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

26

1.3

39

V

T_J= 25°C, I_S= 50A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T_J= 25°C, I_F= 50A, V_DD= 30V

di/dt = 500A/μs

nC

Q_rr

t_on

110

165

Time is dominated by parasitic Inductance

Thermal Resistance

Parameter

Typ.

–––

Max.

1.2

15

Units

Junction-to-Case

Junction-to-Ambient

R_θJC(Bottom)

R_θJC(Top)

R_θJA

°C/W

35

R_θJA(<10s)

22

2

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IRFH5206PbF

1000

100

10

1000

100

10

VGS

10V

VGS

10V

TOP

8.0V

6.0V

5.0V

4.5V

4.3V

4.0V

3.8V

8.0V

6.0V

5.0V

4.5V

4.3V

4.0V

3.8V

BOTTOM

3.8V

1

≤60μs PULSE WIDTH

Tj = 150°C

60μs PULSE WIDTH

≤

Tj = 25°C

0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.0

1.5

1.0

0.5

1000

100

10

I

= 50A

D

V

= 10V

GS

T

= 150°C

J

T

= 25°C

J

1

V

= 25V

DS

≤

60μs PULSE WIDTH

0.1

2.0

3.0

V

4.0

5.0

6.0

7.0

8.0

9.0

-60 -40 -20

T

0

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

GS

, Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 3. Typical Transfer Characteristics

14.0

10000

1000

100

V

C

= 0V,

f = 1 MHZ

GS

I = 50A

D

= C + C , C SHORTED

iss

gs

gd ds

12.0

C

= C

V

= 48V

= 30V

rss

gd

DS

C

= C + C

ds

oss

gd

10.0

8.0

6.0

4.0

2.0

0.0

Ciss

VDS= 12V

Coss

Crss

1

10

100

0

10

20

30

40

50

60

V

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

DS

G

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

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3

IRFH5206PbF

1000

100

10

OPERATION IN THIS ARE LIMITED BY R

1msec

(on)

DS

100

10

1

100μsec

10msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

1

10

100

0.2

0.4

V

0.6

0.8

1.0

1.2

1.4

1.6

V

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

4.0

100

80

60

40

20

0

3.5

3.0

2.5

2.0

1.5

I

= 150μA

= 500μA

= 1.0mA

= 1.0A

D

25

50

75

100

125

150

-75 -50 -25

0

25 50 75 100 125 150

T , Temperature ( °C )

J

T

, CaseTemperature (°C)

C

Fig 9. Maximum Drain Current Vs.

Fig 10. Threshold Voltage Vs. Temperature

Case (Bottom) Temperature

10

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

4

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IRFH5206PbF

400

300

200

100

0

20

15

10

5

I

= 50A

I

D

TOP

5.1A

13A

BOTTOM 50A

T

= 125°C

= 25°C

J

T

J

25

50

75

100

125

150

4

6

8

10

12 14 16 18

20

Starting T , Junction Temperature (°C)

J

V

Gate -to -Source Voltage (V)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

V

(BR)DSS

t

p

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

I

AS

20V

Ω

0.01

t

p

Fig 14b. Unclamped Inductive Waveforms

Fig 14a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

-

10%

V_GS

10V

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

t_d(on)

t_d(off)

t_r

t_f

Fig 15a. Switching Time Test Circuit

Fig 15b. Switching Time Waveforms

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5

IRFH5206PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

1K

Qgs1

Qgs2

Qgd

Qgodr

Fig 18. Gate Charge Waveform

Fig 17. Gate Charge Test Circuit

6

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IRFH5206PbF

PQFN 5x6 Outline "B" Package Details

For footprint and stencil design recommendations, please refer to application note AN-1154 at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

XYWWX

XXXXX

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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7

IRFH5206PbF

PQFN Tape and Reel

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information^†

Industrial^††

(per JEDEC JES D47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

PQFN 5mm x 6mm

(per JEDEC J-ST D-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.07mH, R_G= 25Ω, I_AS= 50A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

θ

ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.3/2010

8

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型号：	IRFH5206PBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总8页 (文件大小：301K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFH5206PBF [INFINEON]

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