IRFH5215TRPBF [INFINEON]
Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8;
| 型号： | IRFH5215TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH5215PbF
HEXFET® Power MOSFET
VDS
150
58
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
m
Ω
21
nC
RG (typical)
2.3
Ω
ID
PQFN 5X6 mm
27
A
(@Tc(Bottom) = 25°C)
Applications
• Primary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• BoostConverters
Features and Benefits
Features
Benefits
Low RDSon (< 58 mΩ)
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Lower Conduction Losses
Increased Power Density
Increased Reliability
Low Profile (<0.9 mm)
results in Increased Power Density
⇒
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH5215TRPBF
IRFH5215TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
150
± 20
5.0
Units
VDS
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
4.0
27
A
17
108
3.6
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
Power Dissipation
104
Linear Derating Factor
0.029
-55 to + 150
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through ꢀ are on page 8
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IRFH5215PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
150
–––
–––
–––
V
VGS = 0V, ID = 250uA
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
0.19 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 45.5
58
VGS = 10V, ID = 16A
m
Ω
3.0
–––
–––
–––
–––
–––
21
–––
-12
5.0
V
VDS = VGS, ID = 100µA
∆VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
–––
–––
–––
20
µA
VDS = 150V, VGS = 0V
250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
––– -100
VGS = -20V
gfs
Qg
–––
21
–––
32
S
VDS = 50V, ID = 16A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
7.2
2.2
6.7
4.9
8.9
10
–––
–––
–––
–––
–––
–––
VDS = 75V
V
GS = 10V
nC
ID = 16A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
2.3
6.7
6.3
11
–––
–––
–––
–––
–––
Ω
VDD = 75V, VGS = 10V
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
R =1.3
Ω
G
2.9
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1350 –––
VGS = 0V
–––
–––
120
30
–––
–––
VDS = 50V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
96
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
16
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
–––
–––
–––
–––
27
A
G
ISM
108
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
40
1.3
60
V
TJ = 25°C, IS = 16A, VGS = 0V
ns TJ = 25°C, IF = 16A, VDD = 75V
di/dt = 500A/µs
nC
Qrr
ton
370
555
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
35
JA
RθJA (<10s)
22
2
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IRFH5215PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
BOTTOM
BOTTOM
1
5.0V
1
0.1
0.01
5.0V
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.5
I
= 16A
D
V
= 10V
GS
2.0
1.5
1.0
0.5
0.0
100
T
= 150°C
J
10
1
T
= 25°C
J
V
= 50V
DS
≤
60µs PULSE WIDTH
0.1
2
4
6
8
10 12 14
16
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 16A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
= 120V
= 75V
12.0
10.0
8.0
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
VDS= 30V
C
iss
C
oss
6.0
C
4.0
rss
2.0
0.0
10
0
5
10
15
20
25
30
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH5215PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T = 150°C
J
1msec
T
= 25°C
10msec
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1
0.1
1
10
100
1000
0.2
0.4
SD
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
30
6.0
25
20
15
10
5
5.0
4.0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 10mA
D
D
D
D
3.0
2.0
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5215PbF
130
120
110
100
90
400
350
300
250
200
150
100
50
I
= 16A
I
D
D
TOP
2.0A
4.9A
BOTTOM 16A
T = 125°C
J
80
70
60
T = 25°C
J
50
40
0
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20
Gate -to -Source Voltage (V)
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFH5215PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5215PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5215PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 50Ω, IAS = 16A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
Comment
1/13/2014
• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
• Updated data sheet with the new IR corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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January 13, 2014
相关型号：
IRFH5220TRPBF
Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH5250
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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