IRFH5301 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFH5301 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH5301PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
(@VGS = 10V)
1.85
m
Ω
Qg (typical)
RG (typical)
37
nC
1.5
Ω
ID
PQFN 5X6 mm
100
A
(@Tc(Bottom) = 25°C)
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for Buck Converters
• Battery Operated DC Motor Inverter MOSFET
FeaturesandBenefits
Features
Benefits
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Lower Conduction Losses
Increased Power Density
Increased Reliability
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Standard Pack
Form
Orderable part number
Package Type
Note
Quantity
IRFH5301TRPbF
IRFH5301TR2PbF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Tape and Reel
Tape and Reel
4000
400
EOL notice # 259
Absolute Maximum Ratings
Max.
30
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
± 20
35
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
28
@ TA = 70°C
100
100
400
3.6
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
DM
P
P
@TA = 25°C
Power Dissipation
D
D
W
W/°C
°C
110
0.029
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
-55 to + 150
Operating Junction and
T
T
J
Storage Temperature Range
STG
Notes through are on page 9
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IRFH5301PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
0.02
1.55
2.4
1.80
-6.9
–––
–––
–––
–––
–––
77
–––
–––
1.85
2.9
V
VGS = 0V, ID = 250μA
Δ
VDSS/ TJ
–––
–––
–––
1.35
–––
–––
–––
–––
–––
218
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
Ω
m
VGS = 4.5V, ID = 50A
DS = VGS, ID = 100μA
VDS = 24V, VGS = 0V
VGS(th)
Gate Threshold Voltage
2.35
V
V
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
5.0
μA
150
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
-100
VGS = -20V
VDS = 15V, ID = 50A
gfs
Qg
Qg
–––
–––
56
S
nC VGS = 10V, VDS = 15V, ID = 50A
Total Gate Charge
37
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
9.8
5
–––
–––
–––
–––
–––
–––
2.3
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
12
ID = 50A
Qgodr
10
See Fig.6,17 & 18
Qsw
17
Qoss
RG
22
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
1.5
21
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
Rise Time
78
ID = 15A
ns
Ω
RG=1.0
See Fig.15
VGS = 0V
Turn-Off Delay Time
22
Fall Time
23
Ciss
Coss
Crss
Input Capacitance
5114
1017
406
pF
Output Capacitance
VDS = 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
150
50
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
100
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
400
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 50A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
24
1.0
36
80
V
T = 25°C, I = 50A, VDD = 15V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 300A/μs
53
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
1.1
15
35
22
°C/W
Junction-to-Ambient
Junction-to-Ambient
RθJA (<10s)
2
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IRFH5301PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
BOTTOM
BOTTOM
2.5V
1
2.5V
60μs
60μs
Tj = 150°C
PULSE WIDTH
≤
PULSE WIDTH
≤
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= 50A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
V
= 25°C
= 15V
J
DS
≤
60μs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140160
1.5
2
2.5
3
3.5 4.5 5
4
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
V
= 24V
= 15V
iss
gs
gd
ds
DS
12
10
8
= C
V
rss
oss
gd
DS
= C + C
ds
gd
10000
1000
100
C
iss
6
C
oss
4
C
rss
2
0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
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IRFH5301PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
T
= 150°C
J
100μsec
1msec
T
= 25°C
J
1
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.10
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
200
Limited By Package
160
120
80
40
0
I
= 1.0A
D
ID = 1.0mA
ID = 250μA
ID = 100μA
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
J
, Temperature ( °C )
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5301PbF
6
5
4
3
2
1
0
700
600
500
400
300
200
100
0
I
I
= 50A
D
D
TOP
9.69A
18.4A
BOTTOM 50A
T
= 125°C
J
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFH5301PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5301PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5301PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thicknes s
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between s ucces s ive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH5301PbF
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.119mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Revision History
Date
Comments
•
•
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
12/16/2013
3/12/2015
Updated data sheet with new IR corporate template
Updated package outline and tape and reel on pages 7 and 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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