IRFH6200 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFH6200 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH6200TRPbF
HEXFET® Power MOSFET
VDS
20
V
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
0.99
mΩ
1.50
155
1.3
Qg (typical)
RG (typical)
nC
Ω
ID
100
A
(@Tmb = 25°C)
PQFN 5X6 mm
Applications
• Charge and discharge switch for battery application
• Load switch for 12V (typical) bus
• Hot-Swap Switch
Features
Benefits
Low RDSon (≤ 0.99mΩ)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Low Thermal Resistance to PCB (≤ 0.8°C/W)
Low Profile (≤ 0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Environmentally Friendlier
Standard Pack
Form
Tape and Reel
Tape and Reel
Base Part Number
Package Type
Orderable part number
Note
Quantity
4000
400
PQFN 5mm x 6mm
PQFN 5mm x 6mm
IRFH6200TRPbF
IRFH6200TR2PbF
IRFH6200PbF
EOL Notice #259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Max.
20
±12
49
Units
VDS
VGS
V
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
40
100
100
400
3.6
156
A
Power Dissipation
Power Dissipation
PD @TA = 25°C
PD @Tmb = 25°C
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
-55 to + 150
W/°C
°C
TJ
TSTG
Notes through are on page 9
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IRFH6200TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒ
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250μA
Δ
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
–––
0.5
6.4
––– mV/°C Reference to 25°C, ID = 1mA
0.75
0.80
1.10
0.8
0.95
0.99
1.50
1.1
V
V
GS = 10V, ID = 50A
GS = 4.5V, ID = 50A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = 2.5V, ID = 50A
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = 150μA
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
260
–––
–––
–––
–––
-6.6
–––
–––
–––
–––
–––
155
22
––– mV/°C
IDSS
1.0
V
V
V
V
DS = 16V, VGS = 0V
DS = 16V, VGS = 0V, TJ = 125°C
GS = 12V
μA
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
GS = -12V
gfs
Qg
–––
230
–––
–––
S
VDS = 10V, ID = 50A
VDS = 10V
nC
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain Charge
V
GS = 4.5V
53
ID = 50A (See Fig.17 & 18)
Gate Resistance
1.3
Ω
–––
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
14
74
V
DD = 10V, VGS = 4.5V
ID = 50A
ns
Ω
Turn-Off Delay Time
Fall Time
140
160
RG=1.0
See Fig.15
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10890 –––
pF
–––
–––
2890
2180
–––
–––
V
DS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
780
30
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
–––
–––
100
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
400
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
86
1.2
130
525
V
T
T
= 25°C, I = 50A, V
= 0V
GS
J
J
S
ns
= 25°C, I = 50A, VDD = 10V
F
Qrr
Reverse Recovery Charge
350
nC di/dt = 260A/μs
Thermal Resistance
Parameter
Junction-to-Mounting Base
Junction-to-Case
Typ.
Max.
0.8
15
Units
Rθ
0.5
–––
–––
–––
JC-mb
RθJC (Top)
°C/W
Junction-to-Ambient
Junction-to-Ambient
Rθ
35
JA
RθJA (<10s)
22
2
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IRFH6200TRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
BOTTOM
BOTTOM
1.3V
1.3V
60μs PULSE WIDTH
≤
60μs PULSE WIDTH
≤
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 4.5V
GS
100
T
= 175°C
J
T
V
= 25°C
= 10V
J
10
DS
≤
60μs PULSE WIDTH
1.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 16V
= 10V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
10000
C
oss
C
rss
1000
0
100
200
300
400
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
V
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH6200TRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10msec
T
= 150°C
J
100μsec
1msec
T
= 25°C
J
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
1
0.1
1
10
100
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
400
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Limited By Package
300
200
100
0
I
I
I
I
= 150μA
= 500μA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
CaseTemperature
10
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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IRFH6200TRPbF
4
3
2
1
0
3500
3000
2500
2000
1500
1000
500
I
D
I
= 50A
D
TOP
19A
21A
BOTTOM 30A
T
= 125°C
J
T
= 25°C
6
J
0
0
2
4
8
10
12
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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IRFH6200TRPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
-
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
I
AS
Ω
0.01
t
p
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
90%
VDS
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
td(on)
td(off)
tr
tf
Fig 17b. Switching Time Waveforms
Fig 17a. Switching Time Test Circuit
Id
Vds
Vgs
L
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
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IRFH6200TRPbF
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH6200TRPbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DES CRIPTION
Dimens ion des ign to accommodate the component width
Dimension des ign to accommodate the component lenght
Dimension des ign to accommodate the component thicknes s
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between s ucces s ive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
Type
Reel
Diameter
(Inch)
QT Y
Reel
Width
W1
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH6200TRPbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F †† guidelines )
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-STD-020D†† )
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.7mH, RG = 25Ω, IAS = 30A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability.
Revision History
Date
Comments
•
Ω
Ω
Improve the Rdson at 4.5V max from 1.2m to 0.99m .
1/28/2013
•
•
•
•
•
•
•
Added Rdson 10V (Absolute Maximum Rating table still based on Rdson max at 4.5V gate drive voltage) on page 1 & 2.
Formatted the data sheet using the IR Corporate template.
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259)
Updated package outline for “option B” and added package outline for “option G” on page 7
Updated tape and reel on page 8.
12/02/2014
4/28/2015
5/19/2015
Updated package outline for “option G” on page 7.
Updated "IFX logo" on page 1 and page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
IRFH7004
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFH7004TRPBF
Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, B, QFN-8
INFINEON
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