IRFH7787PBF_技术文档

StrongIRFET™

IRFH7787PbF

HEXFET^®Power MOSFET

Application

 Brushed motor drive applications

 BLDC motor drive applications

 Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC inverters

V_DSS

75V

R_DS(on)typ.

6.6m

8.0m

68A

max

I_D

Benefits

 Improved gate, avalanche and dynamic dV/dt ruggedness

 Fully characterized capacitance and avalanche SOA

 Enhanced body diode dV/dt and dI/dt capability

 Lead-free, RoHS compliant

PQFN 5 x 6 mm

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFH7787PbF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH7787TRPbF

18

16

14

12

10

8

70

60

50

40

30

20

10

0

I

= 41A

D

T

= 125°C

J

T

= 25°C

J

6

4

6

8

10 12 14 16 18 20

25

50

75

100

125

150

T

, Case Temperature (°C)

C

V

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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IRFH7787PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

68

43

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

A

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

270

83

P_D@T_C= 25°C

W

W/°C

V

0.67

± 20

V_GS

Gate-to-Source Voltage

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 150

°C

Avalanche Characteristics

E_{AS (Thermally limited)}

I_AR

E_AR

100

146

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy 

Avalanche Current 

mJ

A

mJ

See Fig 15, 16, 23a, 23b

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.5

21

Units

Junction-to-Case 

R_JC(Bottom)

R_JC(Top)

R_JA

Junction-to-Case 

Junction-to-Ambient

°C/W

34

R_JA(<10s)

22

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

75

––– –––

V

V_GS= 0V, I_D= 250µA

–––

60

––– mV/°C Reference to 25°C, I_D= 1mA

V_(BR)DSS/T_J

R_DS(on)

Static Drain-to-Source On-Resistance

–––

2.1 –––

––– –––

6.6

7.5

8.0

–––

3.7

1.0

V_GS= 10V, I_D= 41A 

V_GS= 6.0V, I_D= 21A 

V_DS= V_GS, I_D= 100µA

m



V

V_GS(th)

I_DSS

Gate Threshold Voltage

Drain-to-Source Leakage Current

µA V_DS=75 V, V_GS= 0V

––– ––– 150

––– ––– 100

––– ––– -100

V

_DS=75V,V_GS= 0V,T_J=125°C

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

nA V_GS= 20V

V_GS= -20V

–––

2.3

–––



Notes:

Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T_Jmax, starting T_J= 25°C, L = 120µH, R_G= 50, I_AS= 41A, V_GS=10V.

I_SD 41A, di/dt  1140A/µs, V_DD V_(BR)DSS, T_J175°C.

Pulse width  400µs; duty cycle  2%.

 C_osseff. (TR) is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

.

 C_osseff. (ER) is a fixed capacitance that gives the same energy as C_osswhile V_DSis rising from 0 to 80% V_DSS

.

 R_is measured at T_Japproximately 90°C.

 Limited by T_Jmax, starting T_J=25°C, L= 1mH, R_G= 50, I_AS= 17A, V_GS=10V.

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IRFH7787PbF

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min.

110

–––

Typ. Max. Units

Conditions

–––

75

–––

110

–––

S

V_DS= 10V, I_D= 41A

Q_g

I_D= 41A

Q_gs

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg – Qgd)

Turn-On Delay Time

18

V_DS= 38V

V_GS= 10V

nC

Q_gd

23

Q_sync

t_d(on)

t_r

52

7.3

16

V_DD= 38V

I_D= 41A

Rise Time

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

53

12

–––

R_G= 2.7

V

_GS= 10V 

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

4030

330

200

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz, See Fig.7

pF

Effective Output Capacitance

(Energy Related)

C_{oss eff.(ER)}

C_{oss eff.(TR)}

–––

290

380

–––

V_GS= 0V, VDS = 0V to 60V

V_GS= 0V, VDS = 0V to 60V

Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

MOSFET symbol

D

Continuous Source Current

(Body Diode)

I_S

–––

68

showing the

A

G

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

I_SM

–––

270

1.2

S

V_SD

Diode Forward Voltage

V

T_J= 25°C,I_S= 41A,V_GS= 0V 

dv/dt

Peak Diode Recovery dv/dt

–––

11

29

34

30

42

1.7

––– V/ns T_J= 150°C,I_S= 41A,V_DS= 75V

–––

T_J= 25°C

V_DD= 64V

I_F= 41A,

t_rr

Reverse Recovery Time

ns

T_J= 125°C

T_J= 25°C di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

nC

A

T_J= 125°C

I_RRM

T_J= 25°C



3

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IRFH7787PbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

4.5V

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 150°C



60µs PULSE WIDTH

Tj = 25°C



1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

1000

100

10

I

= 41A

D

V

= 10V

GS

T = 150°C

J

T = 25°C

J

1

V

= 25V

DS

60µs PULSE WIDTH



0.1

-60 -40 -20

0

20 40 60 80 100 120 140 160

2.0

3.0

4.0

5.0

6.0

T , Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

J

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

14.0

100000

10000

1000

I = 41A

D

V

= 0V,

f = 1 MHZ

GS

C

= C + C , C

SHORTED

12.0

iss

gs

gd

ds

V

= 60V

DS

= 38V

DS

= 15V

DS

= C

rss

oss

gd

= C + C

ds

gd

10.0

8.0

6.0

4.0

2.0

0.0

C

iss

C

oss

C

rss

100

0

10 20 30 40 50 60 70 80 90 100

1

10

100

Q , Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 8. Typical Gate Charge vs.

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Gate-to-Source Voltage

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IRFH7787PbF

1000

100

10

100µsec

1msec

100

10

1

T = 150°C

J

OPERATION

IN THIS

AREA

LIMITED BY

R

(on)

DS

T = 25°C

J

10msec

DC

Tc = 25°C

Tj = 150°C

Single Pulse

V

= 0V

GS

1.0

0.1

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

V

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode Forward Voltage

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

95

Id = 1.0mA

90

85

80

75

-10

0

10 20 30 40 50 60 70 80

-60 -40 -20

0

20 40 60 80 100 120 140 160

, Temperature ( °C )

T

J

V

Drain-to-Source Voltage (V)

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_ossStored Energy

40

Vgs = 5.5V

30

20

10

0

Vgs = 6.0V

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

0

20 40 60 80 100 120 140 160 180 200

I , Drain Current (A)

D

Fig 13. Typical On-Resistance vs. Drain Current

5

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IRFH7787PbF

10

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

SINGLE PULSE

Notes:

1. Duty Factor D = t1/t2

( THERMAL RESPONSE )

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming Tj = 125°C and

Tstart = 25°C (Single Pulse)

100

10

1

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and

Tstart = 125°C.

0.1

1.0E-06

1.0E-05

1.0E-04

tav (sec)

1.0E-03

1.0E-02

Fig 15. Avalanche Current vs. Pulse Width

120

100

80

60

40

20

0

TOP

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

BOTTOM 1.0% Duty Cycle

I

= 41A

D

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 16).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

t

Fig 16. Maximum Avalanche Energy vs. Temperature

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IRFH7787PbF

4.0

3.5

3.0

2.5

2.0

1.5

1.0

14

12

10

8

I = 27A

F

V

= 64V

R

T = 25°C

J

T = 125°C

J

I

= 100µA

= 250µA

= 1.0mA

= 1.0A

D

6

I

D

I

D

4

I

D

2

0

-75 -50 -25

0

25 50 75 100 125 150

0

200

400

600

800

1000

T , Temperature ( °C )

di /dt (A/µs)

J

F

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

14

250

200

150

100

50

I = 41A

F

I = 27A

F

12

10

8

V

= 64V

V

= 64V

R

T = 25°C

J

T = 125°C

J

T = 25°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig 19. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt

300

I = 41A

F

V

= 64V

R

250

200

150

100

50

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig 21. Typical Stored Charge vs. dif/dt

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IRFH7787PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

0.01

I

t



p

AS

Fig 23a. Unclamped Inductive Test Circuit

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit

Fig 24b. Switching Time Waveforms

Id

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b. Gate Charge Waveform

Fig 25a. Gate Charge Test Circuit

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IRFH7787PbF

PQFN 5x6 Outline "E" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note

AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "E" Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

XYWWX

XXXXX

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFH7787PbF

PQFN 5x6 Outline "E" Tape and Reel

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

TR1 OPTION (QTY 400)

METRIC

MAX

IMPERIAL

MIN

MAX

13.011 177.5

METRIC

MAX

178.5

21.5

13.8

2.3

IMPERIAL

CODE

MIN

MAX

7.028

0.846

0.543

0.091

2.598

MIN

A

B

C

D

E

F

12.972

0.823

0.504

0.067

3.819

6.988

0.823

0.520

0.075

2.350

329.5

20.9

12.8

1.7

330.5

21.5

13.5

2.3

0.846

0.532

0.091

3.898

20.9

13.2

1.9

65

97

99

66

Ref

13

17.4

14.5

Ref

13

12

G

0.512

0.571

14.5

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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IRFH7787PbF

Qualification Information^†

Qualification Level

Industrial

(per JEDEC JESD47F^††guidelines)

MSL1

PQFN 5mm x 6mm

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^††)

Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comments

Updated E_{AS (L =1mH)}= 146mJ on page 2

Updated note 8 “Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50, I_AS= 17A, V_GS=10V” on page 2

2/19/2015

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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型号：	IRFH7787PBF
厂家：	Infineon
描述：	Brushed motor drive applications
文件：	总11页 (文件大小：595K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFH7787PBF [INFINEON]

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