IRFH7911 [INFINEON]
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package; 30V双N沟道HEXFET功率MOSFET的PQFN 5× 6毫米无铅封装
| 型号： | IRFH7911 |
| 厂家： | 
Infineon |
| 描述： | 30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package |
| 文件： | 总10页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97427A
IRFH7911PbF
HEXFET® Power MOSFET
Q1
30
Q2
30
VDS
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
8.6
8.3
13
3.0
34
28
m
:
nC
A
ID
(@TA = 25°C)
Dual PQFN 5X6 mm
Applications
• Control and synchronous MOSFET for buck converters
Features and Benefits
Features
Benefits
Increased power density
(50% vs two PQFN 5x6)
Lower switching losses
Control and synchronous FET in one package
Low charge control MOSFET (8.3 nC typical)
Low RDSon synchronous MOSFET (< 3.0 mΩ)
100% Rg tested
Lower conduction losses
results in
⇒
Increased reliability
Low Profile (≤ 0.9 mm)
Increased power density
Easier manufacturing
Environmentally Friendlier
Increased reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL2, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Quantity
IRFH7911TRPBF
IRFH7911TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Tape and Reel
Tape and Reel
4000
400
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
Units
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
13
10
28
23
A
100
2.4
1.5
230
3.4
2.2
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
W
Linear Derating Factor g
Operating Junction and
0.019
0.027
W/°C
°C
TJ
-55 to + 150
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Case f
Junction-to-Ambient g
Q1 Max.
7.7
Q2 Max.
2.5
Units
RθJC
°C/W
RθJA
53
37
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1
1/12/10
IRFH7911PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
Typ.
–––
0.021
0.022
7.2
11.1
2.4
3.4
–––
-6.8
-6.4
–––
–––
–––
–––
–––
–––
8.3
34
2.0
7.9
1.0
3.6
3.2
11
2.1
12
4.2
15
5.0
19
1.8
0.7
12
22
15
35
12
28
5.9
14
1060
4450
230
850
110
440
Max. Units
Conditions
GS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
V
BVDSS
ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
–––
–––
–––
8.6
V
V/°C
–––
–––
–––
–––
–––
–––
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 26A
Q1
RDS(on)
Static Drain-to-Source On-Resistance
14.5
3.0
mΩ
Q2
VGS = 4.5V, ID = 21A
Q1: VDS = VGS, ID = 25μA
Q2: VDS = VGS, ID = 100μA
4.0
VGS(th)
Gate Threshold Voltage
Q1&Q2 1.35
2.35
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
Q1
Q2
–––
–––
–––
–––
–––
–––
17
––– mV/°C
–––
V
V
V
V
DS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IDSS
IGSS
gfs
Drain-to-Source Leakage Current
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1.0
150
100
-100
–––
–––
12
μA
nA
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
GS = -20V
VDS = 15V, ID = 10A
VDS = 15V, ID = 21A
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Total Gate Charge
51
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q1
VDS = 15V
nC VGS = 4.5V, ID = 10A
Q2
VDS = 15V
VGS = 4.5V, ID = 21A
VDS = 16V, VGS = 0V
nC
Gate Resistance
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Q1
VDD = 15V, VGS = 4.5V
ID = 10A
RG=1.8Ω
Q2
ns
Turn-Off Delay Time
Fall Time
VDD = 15V, VGS = 4.5V
ID = 21A
RG=1.8Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
VDS = 15V
Output Capacitance
Reverse Transfer Capacitance
pF
Q2
Q1
Q2
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Q1 Max. Q2 Max.
Units
mJ
A
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
12
10
32
21
Diode Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
13
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IS = 21A, VGS = 0V
Q1 TJ = 25°C, IF = 10A,
IS
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
3.0
3.0
100
230
1.0
1.0
20
A
ISM
VSD
trr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
A
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
VDD = 15V, di/dt = 300A/μs
Q2 TJ = 25°C, IF = 21A,
20
13
24
29
20
Qrr
VDD = 15V, di/dt = 280A/μs
36
2
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
1
2.3V
2.3V
0.1
0.01
0.1
0.01
≤60μs PULSE WIDTH
Tj = 25°C
≤60μs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1000
VGS
10V
VGS
10V
≤60μs PULSE WIDTH
Tj = 150°C
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
10
1
100
BOTTOM
BOTTOM
10
2.3V
2.3V
≤60μs PULSE WIDTH
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
100
10
1000
100
10
T
= 150°C
J
T
= 150°C
J
T
= 25°C
= 15V
J
1
1
T
= 25°C
J
V
V
= 15V
DS
DS
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
0.1
0.1
1
2
3
4
2
3
4
5
6
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Transfer Characteristics
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
V
C
= 0V,
f = 1 MHZ
GS
GS
= C + C , C SHORTED
= C + C , C SHORTED
iss
gs
gd ds
iss
gs
gd ds
C
= C
C
= C
rss
gd
rss
gd
C
= C + C
C
= C + C
oss
ds
gd
oss
ds
gd
C
10000
1000
100
iss
C
iss
C
oss
C
C
oss
rss
C
rss
10
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14
12
10
8
14
12
10
8
I = 10A
D
I = 21A
D
V
V
= 24V
15V
V
V
= 24V
15V
DS
DS
DS=
DS=
6
6
4
4
2
2
0
0
0
5
10
15
20
25
0
20
40
60
80
100
Q , Total Gate Charge (nC)
Q , Total Gate Charge (nC)
g
g
Fig 10. Typical Gate Charge vs. Gate-to-Source
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Voltage
1000
1000
OPERATION IN THIS AREA
OPERATION IN THIS AREA
LIMITED BY R
(on)
LIMITED BY R
(on)
DS
DS
100
10
100
10
1
100μsec
100μsec
1msec
1msec
1
10msec
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
4
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
I
= 26A
I
= 12A
D
D
V
= 10V
V
= 10V
GS
GS
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
, Junction Temperature (°C)
J
J
Fig 14. Normalized On-Resistance vs. Temperature
Fig 13. Normalized On-Resistance vs. Temperature
1000
1000
100
100
T
= 150°C
J
T
= 150°C
J
10
1.00
0.10
10
1.00
0.10
T
= 25°C
J
T
= 25°C
J
V
= 0V
1.4
V
= 0V
1.4
GS
GS
0.4
0.6
V
0.8
1.0
1.2
1.6
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
, Source-to-Drain Voltage (V)
, Source-to-Drain Voltage (V)
SD
SD
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
25
12
I
= 13A
D
I
= 26A
D
10
8
20
15
10
5
6
T
= 125°C
= 25°C
J
T
T
= 125°C
= 25°C
J
4
T
J
J
2
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 17. Typical On-Resistance vs.Gate Voltage
Fig 18. Typical On-Resistance vs.Gate Voltage
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
14
12
10
8
30
25
20
15
10
5
6
4
2
0
0
25
50
T
75
100
125
150
25
50
T
75
100
125
150
, Ambient Temperature (°C)
, Ambient Temperature (°C)
A
A
Fig 19. Maximum Drain Current vs. Ambient Temp.
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.5
2.5
2.0
1.5
1.0
0.5
I
= 25μA
2.0
D
I
= 250μA
D
1.5
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
-75 -50 -25
0
25
50
75 100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
150
50
I
I
D
D
TOP
5.4A
6.6A
21A
TOP
2.3A
3.1A
10A
40
30
20
10
0
BOTTOM
BOTTOM
100
50
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Starting T , Junction Temperature (°C)
J
J
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
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IRFH7911PbF
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
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IRFH7911PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 29b. Unclamped Inductive Waveforms
Fig 29a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 30a. Switching Time Test Circuit
Fig 30b. Switching Time Waveforms
Current Regulator
Id
Same Type as D.U.T.
Vds
50KΩ
Vgs
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 31a. Gate Charge Test Circuit
Fig 31b. Gate Charge Waveform
8
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IRFH7911PbF
PQFN 5x6 Outline "C" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1152 at
http://www.irf.com/technical-info/appnotes/an-1152.pdf
PQFN 5x6 Outline "C" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH7911PbF
PQFN 5x6 Outline "C" Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Cons umer††
Qualification level
(per JEDE C JE S D47F ††† guidelines )
MS L2 ††††
(per JEDEC J-S TD-020D†††
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
)
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
†††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Revision History
Date
Comment
1/8/2010
Pin number on front page drawing has been corrected
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C,
Data and specifications subject to change without notice.
Q1: L = 0.23mH, RG = 25Ω, IAS = 10A;
Q2: L = 0.15mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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相关型号：
IRFH7914TRPBF
Power Field-Effect Transistor, 15A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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