IRFH8321PBF [INFINEON]
HEXFETPower MOSFET;
| 型号： | IRFH8321PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总9页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH8321PbF
HEXFET® Power MOSFET
VDS
30
V
V
Vgs max
± 20
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
4.9
m
6.8
Qg typ.
19.4
nC
A
ID
25
PQFN5X6mm
(@Tc(Bottom) = 25°C)
Applications
Synchronous MOSFET for high frequency buck converters
Features
Benefits
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Note
Quantity
4000
IRFH8321TRPBF
Absolute Maximum Ratings
Max.
Parameter
Gate-to-Source Voltage
Units
V
± 20
VGS
21
17
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
83
A
52
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
ID @ TC = 25°C
25
332
3.4
IDM
Pulsed Drain Current
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
54
Power Dissipation
0.027
Linear Derating Factor
Operating Junction and
W/°C
°C
-55 to + 150
TJ
TSTG
Storage Temperature Range
Notes through are on page 9
www.irf.com © 2012 International Rectifier
August 3, 2012
1
IRFH8321PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
V
VGS = 0V, ID = 250μA
BV / T
–––
–––
–––
1.2
19.7
3.9
5.4
1.7
-6.4
–––
–––
–––
–––
–––
39
–––
4.9
mV/°C Reference to 25°C, ID = 1.0mA
DSS
J
RDS(on)
V
V
GS = 10V, ID = 20A
GS = 4.5V, ID = 16A
m
6.8
VGS(th)
Gate Threshold Voltage
2.2
V
VDS = VGS, ID = 50μA
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
68
–––
1.0
mV/°C
GS(th)
IDSS
μA
VDS = 24V, VGS = 0V
150
100
-100
–––
59
V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VGS = -20V
gfs
Qg
Qg
S
V
V
DS = 10V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
GS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
19.4
5.0
1.9
6.7
5.8
8.6
16.7
0.9
14
29.1
–––
–––
–––
–––
–––
–––
2.7
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
VDS = 15V
GS = 4.5V
ID = 20A
Qgs2
Qgd
V
nC
Qgodr
Qsw
Qoss
RG
nC
VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(of f )
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
ID = 20A
Rise Time
20
ns
Turn-Off Delay Time
12
R =1.8
G
Fall Time
6.8
2600
530
270
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
DS = 10V
ƒ = 1.0MHz
pF
Output Capacitance
V
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
Max.
Units
Single Pulse Avalanche Energy
EAS
IAR
–––
93
mJ
Avalanche Current
–––
20
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
D
–––
–––
25
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
–––
–––
332
S
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
12
1.0
18
30
V
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 500 A/μs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
Qrr
ton
20
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
Max.
Units
RqJC (Bottom)
RqJC (Top)
RqJA
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
–––
2.3
–––
–––
–––
31
37
25
°C/W
RqJA (<10s)
2
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.75V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.75V
2.5V
BOTTOM
BOTTOM
2.5V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
2.5V
V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60μs PULSE WIDTH
1.0
1
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
100
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 150°C
J
Limited by
Source Bonding
Technology
T
= 25°C
J
1
10msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Limited By Source
Bonding Technology
80
60
40
20
0
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
, Case Temperature (°C)
T
, Temperature ( °C )
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
0.20
1
0.1
0.10
0.05
0.02
0.01
0.01
0.001
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
16
14
12
10
8
400
300
200
100
0
I
I
= 20A
D
D
TOP
4.8A
8.9A
BOTTOM 20A
T
= 125°C
J
6
4
T
= 25°C
2
J
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
5
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
LowStrayInductance
Ground Plane
LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
V
GS
0.01
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
6
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
PQFN 5x6 Outline "E" Package Details
For footprint and stencil design recommendations, please refer to application note: AN-1136
For PQFN inspection techniques, please refer to application note:
AN-1154
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
7
August 3, 2012
IRFH8321PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000) TR1 OPTION (QTY 400)
METRIC
MAX
IMPERIAL
MIN
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
13.011 177.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
8
www.irf.com © 2012 International Rectifier
August 3, 2012
IRFH8321PbF
Qualification information†
Cons umer††
(per JE DE C JE S D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D†††
Yes
)
Qualification standards can be found at International Rectifiers web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.46mH, RG = 50, IAS = 20A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 25A by Source Bonding Technology.
Data and specifications subject to change without notice.
IRWORLDHEADQUARTERS:101N.SepulvedaBlvd.,ElSegundo,California90245,USATel:(310)252-7105
TACFax:(310)252-7903
Visit us at www.irf.com for sales contact information.
9
www.irf.com © 2012 International Rectifier
August 3, 2012
相关型号：
IRFH8324
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFH8324PBF
Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH8325TRPBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH8330TRPBF
Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
©2020 ICPDF网 联系我们和版权申明