IRFHM8329TRPBF [INFINEON]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	IRFHM8329TRPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总9页 (文件大小：636K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFHM8329PbF

HEXFET^®Power MOSFET

V_DSS

V_GSmax

±20

R_DS(on)max

(@ V_GS= 10V)

6.1

m

(@ V_GS= 4.5V)

8.8

Qg _(typical)

13

I_D

24

(@T_{C (Bottom)}= 25°C)

PQFN 3.3X3.3 mm

Applications

Charge and Discharge Switch for Notebook PC Battery Application

System/Load Switch

Synchronous MOSFET for Buck Converters

Features

Benefits

Low Thermal Resistance to PCB (<3.8°C/W)

Low Profile (<1.05 mm)

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pinout

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFHM8329PbF

PQFN 3.3 mm x 3.3 mm

IRFHM8329TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

57

36

24

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

I_DM

Pulsed Drain Current 

Power Dissipation 

230

2.6

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.021

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 9

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min.

–––

1.2

–––

Typ.

–––

Max. Units

–––

––– mV/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

BV_DSS/T_J

R_DS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

4.8

6.8

1.7

-6.0

–––

6.1

8.8

2.2

V_GS= 10V, I_D= 20A 

_GS= 4.5V, I_D= 16A 

m

V_GS(th)

V_GS(th)

I_DSS

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

V_DS= V_GS, I_D= 25µA

––– mV/°C

1.0

150

100

-100

–––

µA V_DS= 24V, V_GS= 0V

V_DS= 24V, V_GS= 0V, T_J= 125°C

nA V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

_GS= -20V

V_DS= 10V, I_D= 20A

nC V_GS= 10V, V_DS= 15V, I_D= 20A

gfs

Q_g

Total Gate Charge

_DS= 15V

_GS= 4.5V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

2.9

2.0

4.6

3.5

6.6

7.8

1.4

1710

360

180

–––

I_D= 20A

nC V_DS= 16V, V_GS= 0V



V_DD= 15V, V_GS= 4.5V

ns I_D= 20A

R_G=1.8

Gate Resistance

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS= 0V

V_DS= 10V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy 

Avalanche Current 

Typ.

–––

Max.

Units

E_AS

I_AR

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

Continuous Source Current

(Body Diode)

––– ––– 24

––– ––– 230

I_SM

Pulsed Source Current

(Body Diode) 

integral reverse

p-n junction diode.

V_SD

t_rr

Q_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

––– ––– 1.0

T_J= 25°C, I_S= 20A, V_GS= 0V 

T_J= 25°C, I_F= 20A, V_DD= 15V

––– 13

––– 8.1

nC di/dt = 290A/µs 

Thermal Resistance

Parameter

Typ.

–––

Max.

3.8

Units

Junction-to-Case 

R_JC(Bottom)

R_JC(Top)

°C/W

Junction-to-Case 

Junction-to-Ambient 

–––

R_JA

R_JA(<10s)

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

1000

100

1000

100

VGS

10V

VGS

10V

TOP

7.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

7.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

BOTTOM

2.5V

60µs PULSE WIDTH

Tj = 25°C



60µs PULSE WIDTH

Tj = 150°C



0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1.8

1.6

1.4

1.2

1.0

0.8

0.6

1000

100

= 20A

= 10V

= 150°C

= 25°C

= 10V



60µs PULSE WIDTH

1.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

10000

1000

100

= 0V,

= C

f = 1 MHZ

I = 20A

= 24V

= 15V

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

DS=

iss

oss

rss

100

Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Submit Datasheet Feedback June 5, 2014

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

IRFHM8329PbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100µsec

1msec

= 150°C

Limited by Package

= 25°C

10msec

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

100

0.0

0.5

1.0

1.5

2.0

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

2.6

2.4

2.2

2.0

1.8

Limited by source

bonding technology



= 25µA

= 250µA

= 1.0mA

= 1.0A

1.6

1.4

1.2

1.0

0.8

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Case Temperature (°C)

, Temperature ( °C )

Fig 10. Drain-to–Source Breakdown Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

June 5, 2014

IRFHM8329PbF

180

160

140

120

100

= 20A

TOP

4.0A

8.6A

BOTTOM 20A

= 125°C

= 25°C

0.0

4.0

8.0

12.0

16.0

20.0

100

125

150

, Gate-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On– Resistance vs. Gate Voltage

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming

Tstart = 150°C. (Single Pulse)

j = 25°C and

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs. Pulsewidth

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

PQFN 3.3mm x 3.3mm Outline Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note

AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 3.3mm x 3.3mm Outline Part Marking

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

PQFN 3.3mm x 3.3mm Outline Tape and Reel

REEL DIMENSIONS

TAPE DIMENSIONS

DIMENSION (MM)

DIMENSION (INCH)

CODE

MIN

3.50

1.10

7.90

11.80

12.30

MAX

3.70

MIN

.138

.043

.311

.465

.484

MAX

.146

.051

.319

.480

.492

3.70

1.30

8.10

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

12.20

12.50

Qty

4000

13 Inches

Reel Diameter

CODE

DESCRIPTION

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght

Dimension design to accommodate the component thickness

Overall width of the carrier tape

Pitch between successive cavity centers

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Submit Datasheet Feedback

June 5, 2014

IRFHM8329PbF

Qualification Information^†

Qualification Level

Consumer^††

(per JEDEC JESD47F^†††guidelines)

MSL1

PQFN 3.3mm x 3.3mm

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^†††

)

Yes

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Higher qualification ratings may be available should the user have such requirements. Please contact your

International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/

††† Applicable version of JEDEC standard at the time of product release.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T_J= 25°C, L = 0.22mH, R_G= 50, I_AS= 20A.

 Pulse width  400µs; duty cycle  2%.

 R_is measured at T_Jof approximately 90°C.

 When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994

for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf

 Calculated continuous current based on maximum allowable junction temperature.

 Current is limited to 25A by source bonding technology.

Revision History

Date

Comments

 Updated schematic on page 1

 Updated package outline and part marking on page 7

 Updated tape and reel on page 8

6/5/14

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Submit Datasheet Feedback

June 5, 2014

IRFHM8329TRPBF [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E