IRFHS8242PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFHS8242PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96337A
IRFHS8242PbF
HEXFET® Power MOSFET
VDS
25
20
V
V
W
TOP VIE
VGS max
±
D
6
5
4
D
D
S
RDS(on) max
(@VGS = 10V)
D
D
G
1
2
3
D
13.0
4.3
m
Ω
G
D
D
Qg (typical)
( @ VGS = 4.5V)
ID
D
nC
A
S
D
S
S
2mm x 2mm PQFN
8.5
(@Tc(Bottom) = 25°C)
Applications
• System/Load Switch
FeaturesandBenefits
Features
Low RDSon (≤ 13.0mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFHS8242TRPBF
IRFHS8242TR2PBF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
400
Absolute Maximum Ratings
Parameter
Max.
25
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
±20
9.9
8.0
21
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
@ TC(Bottom) = 25°C
@ TC(Bottom)= 70°C
@ TC(Bottom) = 25°C
A
17
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
8.5
84
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
2.1
1.3
D
D
W
Power Dissipation
0.02
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
11/30/10
IRFHS8242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS
∆Β
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
19
–––
–––
V
∆
VDSS/ TJ
18
RDS(on)
10.0
17.0
1.8
13.0
21.0
2.35
VGS = 10V, ID = 8.5A
Ω
m
VGS = 4.5V, ID = 6.8A
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = 25µA
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.8
–––
–––
–––
–––
–––
4.3
––– mV/°C
IDSS
1.0
µA
VDS = 20V, VGS = 0V
150
VDS = 20V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
DS = 10V, ID = 8.5A
IGSS
Gate-to-Source Forward Leakage
100
nA
V
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
gfs
Qg
–––
–––
–––
–––
–––
S
V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 4.5V, VDS = 13V, ID = 8.5A
VDS = 13V
Total Gate Charge
Qg
10.4
1.8
Gate-to-Source Charge
Gate-to-Drain Charge
Qgs
Qgd
RG
td(on)
tr
nC
VGS = 10V
1.6
ID = 8.5A (See Fig. 6 & 16)
Gate Resistance
Turn-On Delay Time
Rise Time
1.9
Ω
–––
–––
6.5
VDD = 13V, VGS = 4.5V
ID = 8.5A
19
–––
–––
–––
–––
–––
–––
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
5.4
RG=1.8Ω
See Fig.17
5.3
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
653
171
78
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
Continuous Source Current
D
–––
–––
8.5
showing the
integral reverse
(Body Diode)
A
G
ISM
Pulsed Source Current
–––
–––
84
S
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 8.5A , V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
11
1.0
17
17
V
T = 25°C, I = 8.5A , VDD = 13V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 280 A/µs
11
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
°C/W
Junction-to-Ambient
Rθ
JA
Junction-to-Ambient (<10s)
RθJA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ R is measured at TJ of approximately 90°C.
θ
ꢀ For DESIGN AID ONLY, not subject to production testing.
2
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IRFHS8242PbF
100
10
100
10
1
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
0.1
0.01
60µs PULSE WIDTH
60µs PULSE WIDTH
≤
≤
Tj = 25°C
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 8.5A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
10
V
= 15V
DS
≤
60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120140 160
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
12.0
10.0
8.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 8.5A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
V
= 20V
= 13V
= 5.0V
DS
DS
DS
= C + C
ds
gd
1000
100
10
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
0
2
4
6
8
10
12
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFHS8242PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T = 150°C
J
100µsec
1msec
T = 25°C
J
10
Limited by
Wire Bond
10msec
DC
1
Tc = 25°C
Tj = 150°C
V
= 0V
Single Pulse
GS
1.0
0.1
0
1
10
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
1.1
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
25
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Limited By Package
20
I
= 25µA
D
15
10
5
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFHS8242PbF
30
25
20
15
10
5
35
30
25
20
15
10
5
I
= 8.5A
D
Vgs = 4.5V
T
= 125°C
J
Vgs = 10V
T
= 25°C
15
J
0
0
5
10
20
0
20
40
60
80
100
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
600
500
400
300
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14. Typical Power vs. Time
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRFHS8242PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
td(on)
td(off)
tr
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRFHS8242PbF
PQFN 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 2x2 Outline Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHS8242PbF
PQFN 2x2 Outline Tape and Reel
8
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IRFHS8242PbF
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 2mm x 2mm
(per JEDEC J-S T D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2010
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9
相关型号：
IRFHS9301
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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