IRFHS9301 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFHS9301 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHS9301PbF
HEXFET® Power MOSFET
VDS
TOP VIEW
-30
V
V
VGS max
±20
D
D
D
D
1
2
6
5
4
D
D
S
RDS(on) max
(@VGS = -10V)
37
13
mΩ
nC
A
G
D
D
Qg (typical)
D
D
S
S
ID
S
G 3
-8.5
2mm x 2mm PQFN
(@TC = 25°C)
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Benefits
Low RDSon (≤ 37mΩ)
Lower Conduction Losses
Enable better thermal dissipation
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
results in Increased Power Density
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4000
IRFHS9301TRPBF
IRFHS9301TR2PBF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Tape and Reel
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
-30
Units
VDS
V
VGS
Gate-to-Source Voltage
± 20
-6.0
-4.8
-13
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
A
-10
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
-8.5
-52
2.1
1.3
Power Dissipation
PD @TA = 25°C
PD @ TA = 70°C
W
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
TJ
TSTG
Storage Temperature Range
Notes through ꢀ are on page 2
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IRFHS9301PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250μA
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min.
Typ.
–––
0.02
30
Max.
–––
–––
37
Units
V
BVDSS
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
9.3
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -7.8A
VGS = -4.5V, ID = -6.2A
ΔΒVDSS/ΔTJ
RDS(on)
V/°C
Static Drain-to-Source On-Resistance
mΩ
52
65
VGS(th)
Gate Threshold Voltage
-1.8
-4.8
–––
–––
–––
–––
–––
6.9
13
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
VDS = VGS, ID = -25μA
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = -24V, VGS = 0V
μA
V
V
DS = -24V, VGS = 0V, TJ = 125°C
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VGS = 20V
DS = -10V, ID = -7.8A
V
gfs
Qg
S
VDS = -15V,VGS = -4.5V,ID = - 7.8A
VGS = -10V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
V
DS = -15V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
2.1
3.9
17
ID = -7.8A
Ω
V
DD = -15V, VGS = -4.5V
Turn-On Delay Time
Rise Time
12
ID = -7.8A
80
ns
Ω
td(off)
tf
RG = 2.0
Turn-Off Delay Time
Fall Time
13
See Figs. 19a & 19b
VGS = 0V
25
Ciss
Coss
Crss
Input Capacitance
580
125
79
VDS = -25V
pF
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0KHz
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
D
S
–––
–––
-8.5
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
-52
VSD
T = 25°C, I = -7.8A, V = 0V
Diode Forward Voltage
-1.2
V
J
S
GS
trr
T = 25°C, I = -7.8A, VDD = -15V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
30
45
ns
J
F
Qrr
di/dt = 280/μs
110
170
nC
Thermal Resistance
Typ.
–––
–––
Max.
13
Parameter
Junction-to-Case
Junction-to-Case
Units
RθJC (Bottom)
RθJC (Top)
RθJA
90
°C/W
Junction-to-Ambient
60
–––
42
Junction-to-Ambient (t<10s)
RθJA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
.
2
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IRFHS9301PbF
1000
100
10
1000
100
10
VGS
-10V
VGS
TOP
TOP
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
BOTTOM
BOTTOM
-2.8V
-2.8V
1
1
≤60μs PULSE WIDTH
Tj = 150°C
60μs
≤
PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
1.6
1.4
1.2
1.0
0.8
0.6
I
= -7.8A
D
V
= -10V
GS
T
= 150°C
J
T
= 25°C
J
V
= -15V
DS
60μs PULSE WIDTH
≤
0.1
1
2
3
4
5
6
-60 -40 -20
T
0
20 40 60 80 100120 140 160
, Junction Temperature (°C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14
V
C
= 0V,
f = 1 KHZ
GS
I = -7.8A
V
V
= -24V
= -15V
D
= C + C , C SHORTED
DS
DS
iss
gs
gd ds
12
10
8
C
= C
rss
gd
C
= C + C
VDS= -6V
oss
ds
gd
C
C
iss
oss
6
C
rss
4
2
10
0
1
10
100
0
2
4
6
8
10 12 14 16 18
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFHS9301PbF
1000
100
10
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1msec
100μsec
T
= 150°C
J
10
1
T
= 25°C
V
0.1
0.01
J
Tc = 25°C
Tj = 150°C
Single Pulse
DC
10
10msec
= 0V
GS
1.0
0.1
1
100
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
14
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
12
I
= -25uA
10
8
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFHS9301PbF
100
80
60
40
20
100
80
I
= -7.8A
D
Vgs = -4.5V
60
T
= 125°C
J
40
Vgs = -10V
T
= 25°C
5
J
20
0
10
15
20
0
5
10
15
20
25
30
-I , Drain Current (A)
D
-V
GS,
Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
600
500
400
300
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14. Typical Power vs. Time
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T *
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
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IRFHS9301PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRFHS9301PbF
PQFN Package Details
PQFN Part Marking
9301
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFHS9301PbF
PQFN Tape and Reel
CORE
TAPE
Remark:
- Dimension above are typical dimensions.
Width
- Cover tape thickness is 0.048mm +/- 0.005mm.
- Surface resistivity 10E5 < Rs <10E9.
Table 2:
COVER
TAPE
TOLERANCE
(WIDTH)
+/- 0.1 mm
+/- 0.1 mm
5.4 mm
9.5 mm
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFHS9301PbF
Qualification information†
Industrial††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 2mm x 2mm
(per I PC/JE DE C J-S T D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
5/12/2014
5/21/2014
• Updated data sheet based on corporate template.
•
Updated qual level from "Consumer" to "Industrial" on page 1 & 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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