IRFI1010NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFI1010NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95418
IRFI1010NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l IsolatedPackage
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.012Ω
G
l Lead-Free
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
49
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
35
A
290
58
PD @TC = 25°C
W
W/°C
V
Linear Derating Factor
0.38
± 20
360
43
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating
5.8
5.0
mJ
V/ns
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.6
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
65
06/16/04
IRFI1010NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.06 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.012
Ω
V
S
VGS = 10V, ID = 26A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43A
Gate Threshold Voltage
2.0
30
4.0
Forward Transconductance
25
250
100
-100
130
23
53
V
DS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 43A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
11
66
40
46
VDD = 28V
ID = 43A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.6Ω
RD = 0.62Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
from package
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
2900
880
330
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
= 1.0MHz, See Fig. 5
= 1.0MHz
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
49
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
290
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1.3
81 120
240 370
V
TJ = 25°C, IS = 26A, VGS = 0V
ns
TJ = 25°C, IF = 43A
Qrr
nC di/dt = 100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25Ω, IAS = 43A. (See Figure 12)
ꢀ t=60s, =60Hz
Uses IRF1010N data and test conditions
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFI1010NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
4.5V
20µs PULSE WIDTH
T
C
= 175°C
T
C
= 25°C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
3.0
I
= 72A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
100
10
1
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
10A
V
= 10V
GS
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFI1010NPbF
5000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 43A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
gd
ds
DS
DS
= C
C
= C + C
iss
ds
gd
4000
3000
2000
1000
0
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
40
60
80
100
120
140
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
GS
A
1
A
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFI1010NPbF
RD
VDS
50
40
30
20
10
0
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
10%
°
, Case Temperature ( C)
T
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI1010NPbF
1000
800
600
400
200
0
I
D
TOP
18A
31A
BOTTOM 43A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
V
= 25V
50
DD
A
175
t
p
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFI1010NPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFI1010NPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMP LE: T HIS IS AN IRFI8 4 0G
WITH AS S EMBLY
P ART NUMBER
LO T C O DE 3 4 3 2
INT ERNAT IO NAL
RECT IFIER
LO G O
IRFI840G
AS S EMBLED O N WW 2 4 1 9 9 9
IN THE AS S EMBLY LINE "K"
924K
32
34
DAT E CO DE
YEAR 9 = 19 9 9
WEE K 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LO T C O DE
LINE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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