IRFI1310NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFI1310NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94873
IRFI1310NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.036Ω
l Lead-Free
G
Description
ID = 24A
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
24
17
A
140
PD @TC = 25°C
Power Dissipation
56
W
W/°C
V
Linear Derating Factor
0.37
± 20
420
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
22
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
5.6
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.7
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
65
12/9/03
IRFI1310NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.11 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.036
Ω
V
S
VGS = 10V, ID = 13A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 22A
Gate Threshold Voltage
2.0
14
4.0
Forward Transconductance
25
250
100
-100
120
15
58
V
DS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 22A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
11
56
45
40
VDD = 50V
ID = 22A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.6Ω
RD = 2.9Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
7.5
Ciss
Coss
Crss
C
Input Capacitance
1900
450
230
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
= 1.0MHz, See Fig. 5
= 1.0MHz
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
24
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
140
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.3
180 270
1.2 1.8
V
TJ = 25°C, IS = 13A, VGS = 0V
ns
TJ = 25°C, IF = 22A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.0mH
ꢀ t=60s, =60Hz
RG = 25Ω, IAS = 22A. (See Figure 12)
Uses IRF1310N data and test conditions
ISD ≤ 22A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFI1310NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20us PULSE WIDTH
20us PULSE WIDTH
T = 175 oC
J
T = 25 oC
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
36A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
T = 25oC
J
T = 175oC
J
V
= 10V
GS
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI1310NPbF
3500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 22A
GS
C
= C + C
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd ,
DS
DS
DS
C
= C
3000
2500
2000
1500
1000
500
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
0
20
40
60
80
100
120
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
1
T = 25oC
10ms
C
T = 175oC
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFI1310NPbF
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.1
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI1310NPbF
1000
800
600
400
200
0
I
D
TOP
9.0A
16A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
o
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI1310NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFI1310NPbF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
E XAMPL E: T HIS IS AN IRF I840G
WIT H AS S E MB LY
PART NU MB E R
L OT CODE 3432
AS S E MB LE D ON WW 24 1999
IN T HE AS S E MB LY LINE "K "
INT E RNAT IONAL
R E CT IF IER
L OGO
IR FI840G
924K
32
34
DAT E CODE
YEAR 9 = 1999
WEE K 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB LY
LOT CODE
L INE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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