IRFI4321PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFI4321PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97104
IRFI4321PbF
HEXFET® Power MOSFET
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
VDSS
RDS(on) typ.
150V
12.2m:
16m:
34A
max.
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
ID
D
S
D
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
S
G
D
G
TO-220AB Full-Pak
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Max.
34
Units
A
21
140
PD @TC = 25°C
46
Maximum Power Dissipation
Linear Derating Factor
W
0.37
W/°C
V
VGS
±30
Gate-to-Source Voltage
Single Pulse Avalanche Energy d
EAS (Thermally limited)
170
mJ
°C
TJ
-55 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Junction-to-Case f
Junction-to-Ambient f
Typ.
–––
–––
Max.
2.73
65
Units
RθJC
RθJA
°C/W
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1
6/23/06
IRFI4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 190 ––– mV/°C Reference to 25°C, ID = 1mAe
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
∆V(BR)DSS/∆TJ
RDS(on)
––– 12.2
3.0 –––
16
5.0
20
V
V
V
V
GS = 10V, ID = 20A e
mΩ
V
VGS(th)
DS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
µA
mA
DS = 150V, VGS = 0V
1.0
DS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
––– ––– 100
––– ––– -100
nA VGS = 20V
GS = -20V
V
RG(int)
–––
0.8
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 20A
nC ID = 20A
DS = 75V
VGS = 10V e
DD = 75V
50
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
73
24
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
V
20
18
ns
V
29
ID = 20A
td(off)
tf
Turn-Off Delay Time
Fall Time
27
RG = 2.5Ω
VGS = 10V e
20
Ciss
Coss
Crss
Input Capacitance
pF
VGS = 0V
4440
390
84
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V
ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
34
A
MOSFET symbol
D
S
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 140
A
(Body Diode)ꢀc
Diode Forward Voltage
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V e
ID = 20A
VSD
trr
––– –––
––– 86
1.3
V
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
130
Qrr
IRRM
ton
VR = 128V,
––– 310 470
––– 6.7 –––
di/dt = 100A/µs e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C
Limited by TJmax, starting TJ = 25°C, L = 0.85mH
RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use
above this value.
2
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IRFI4321PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
5.0V
1
Tj = 25°C
Tj = 150°C
0.1
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20A
V
= 25V
D
DS
≤ 60µs PULSE WIDTH
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
0.1
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
7000
6000
5000
4000
3000
2000
1000
0
20
V
C
= 0V,
f = 1 MHZ
I
= 20A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 120V
DS
C
= C
rss
gd
16
12
8
VDS= 75V
VDS= 30V
C
= C + C
ds
oss
gd
Ciss
Coss
4
Crss
V
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFI4321PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
1msec
T
= 150°C
J
10
1
100µsec
10msec
1
T
= 25°C
V
J
Tc = 25°C
Tj = 150°C
Single Pulse
DC
= 0V
1.0
GS
0.1
0.1
0.2
0.4
0.6
0.8
0.1
1.0
10.0
100.0
1000.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
190
180
170
160
150
140
35
30
25
20
15
10
5
0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
, Junction Temperature (°C)
T
, CaseTemperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
700
I
D
600
500
400
300
200
100
0
TOP
4.6A
5.4A
20A
BOTTOM
40
60
V
80
100
120
140
160
25
50
75
100
125
150
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRFI4321PbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι (sec)
0.312941 0.000381
Ri (°C/W)
0.1
τ
J τJ
τ
τ
Cτ
0.02
0.01
τ
1τ1
τ
2τ2
3τ3
1.187255 0.219458
Ci= τi/Ri
Ci= τi/Ri
1.231176
2.895
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
180
160
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1% Duty Cycle
= 20A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
60
40
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
20
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFI4321PbF
6.0
40
30
20
10
0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
5.0
4.0
3.0
2.0
I
= 33A
F
V
= 128V
R
T
= 125°C
= 25°C
J
T
J
1.0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
di / dt - (A / µs)
f
T
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
40
3200
2800
2400
2000
1600
1200
800
30
20
I
= 50A
I
= 33A
F
F
10
0
V
= 128V
V
= 128V
R
R
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
400
J
T
T
J
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
3200
2800
2400
2000
1600
1200
800
I
= 50A
F
V
= 128V
= 125°C
= 25°C
R
T
400
J
J
T
0
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFI4321PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRFI4321PbF
TO-220AB Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE 3432
INTERNATIONAL
ASSEMBLED ON WW 24, 2001
PART NUMBER
IRFI840G
RECTIFIER
LOGO
124K
32
IN THE ASSEMBLY LINE "K"
34
DATE CODE
YEAR 1 = 2001
WEEK 24
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-F ree"
LINE K
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06
8
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