IRFI634G-019PBF [INFINEON]
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;型号: | IRFI634G-019PBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 开关 晶体管 |
文件: | 总1页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFI634G-024
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI634G-024PBF
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI634G-029PBF
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI634G-030PBF
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI634G-031PBF
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI640-002
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-004
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-005PBF
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明