IRFI640-001PBF [INFINEON]
10.5A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET;
| 型号： | IRFI640-001PBF |
| 厂家： | 
Infineon |
| 描述： | 10.5A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件： | 总1页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFI640-002
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-004
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-005PBF
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-006
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI640-009PBF
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI640-010
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI640-011
Power Field-Effect Transistor, 10.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明