IRFI640B [FAIRCHILD]

200V N-Channel MOSFET; 200V N沟道MOSFET

IRFI640B


型号：	IRFI640B
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	200V N-Channel MOSFET 200V N沟道MOSFET
文件：	总9页 (文件大小：704K)
下载：	下载PDF数据表文档文件

IRFI640G

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

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181 IRF

IRFI640G

Power MOSFET

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48 VISHAY

IRFI640G

Power MOSFET

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23 KERSEMI

IRFI640G

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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4 IRF

IRFI640G-003PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-004PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-009PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-010PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-013PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-015PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-029PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640GPBF

Power MOSFET

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11 KERSEMI

IRFI640GPBF

Power MOSFET

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35 VISHAY

IRFI640GPBF

power mosfet

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85 IRF

IRFI644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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65 IRF

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