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IRFI640G-010PBF [INFINEON]

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;

IRFI640G-010PBF


元器件型号：	IRFI640G-010PBF
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网开关晶体管
PDF文件：	总1页 (文件大小：34K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFI640G-010PBF参数

IRFI640G-013PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-015PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-029PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640GPBF

Power MOSFET

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11 KERSEMI

IRFI640GPBF

Power MOSFET

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35 VISHAY

IRFI640GPBF

power mosfet

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85 IRF

IRFI644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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65 IRF

IRFI644

250V N-Channel MOSFET

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17 FAIRCHILD

IRFI644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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10 IRF

IRFI644

250V N-Channel MOSFET

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28 FAIRCHILD

IRFI644-013

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFI644A

Advanced Power MOSFET

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18 FAIRCHILD

IRFI644A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA

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15 ETC

IRFI644A

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

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0 SAMSUNG

IRFI644B

250V N-Channel MOSFET

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25 FAIRCHILD

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