IRFI644G-031 [INFINEON]

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRFI644G-031
型号: IRFI644G-031
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

文件: 总1页 (文件大小:34K)
中文:  中文翻译
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