IRFI9634G [INFINEON]
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A); 功率MOSFET （ VDSS = -250V ， RDS（ON） = 1.0ohm ，ID = -4.1A ）
| 型号： | IRFI9634G |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A) |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1488
IRFI9634G
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
D
VDSS = -250V
RDS(on) = 1.0Ω
G
ID = -4.1A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
-4.1
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-2.6
A
-16
PD @TC = 25°C
Power Dissipation
35
W
W/°C
V
Linear Derating Factor
0.28
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
520
mJ
A
-4.1
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
3.5
mJ
V/ns
-5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
3.6
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
8/8/96
IRFI9634G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-250 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.27 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 1.0
-2.0 ––– -4.0
Ω
V
S
VGS = -10V, ID = -2.5A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -4.1A
VDS = -250V, VGS = 0V
VDS = -200V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
2.2
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 38
––– ––– 8.0
––– ––– 18
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -4.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -200V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
23 –––
34 –––
21 –––
VDD = -130V
ID = -4.1A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
RD = 31Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
7.5
S
Ciss
Coss
Crss
C
Input Capacitance
––– 680 –––
––– 170 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
40 –––
12 –––
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-4.1
-16
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -6.5
––– 190 290
––– 1.5 2.2
V
TJ = 25°C, IS = -4.1A, VGS = 0V
ns
TJ = 25°C, IF = -4.1A
Qrr
ton
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -4.1A, di/dt ≤ -640A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
Starting TJ = 25°C, L = 62mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -4.1A. (See Figure 12)
IRFI9634G
100
10
1
100
10
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
20µs PULSE W IDTH
= 25°C
20µs PULSE W IDTH
-4.5V
10
-4.5V
T
c
T
= 150°C
C
A
A
1
10
100
1
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 150oC
TJ = 25oC
2.5
2.0
1.5
1.0
0.5
0.0
100
I
= -4.1A
D
TJ = 25°C
10
T J = 150°C
VDS = -50V
20µs PULSE W IDTH
V
= -10V
G S
1
A
10 A
4
5
6
7
8
9
-60
-40
-20
J
0
20
40
60
80
100 120 140 160
T
, Junction Tem perature (°C)
-VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI9634G
20
16
12
8
1200
I
= -4.1A
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
D
V
V
V
= -200V
= -125V
= -50V
DS
DS
DS
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
rss
oss
1000
800
600
400
200
0
gd
C
iss
C
C
oss
4
rss
FO R TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
G
20
30
40
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
100µs
T
= 150°C
J
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 150°C
C
J
V
= 0V
G S
Single Pulse
A
0.1
0.1
A
1.0
2.0
3.0
4.0
5.0
10
100
1000
-V
, Source-to-Drain Voltage (V)
-V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRFI9634G
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
A
25
50
75
100
125
150
T
, Case Tem perature (°C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
10
D
=
0.50
1
0.20
0.10
0 .05
P
D M
0.1
0 .02
0 .01
t
1
t
2
Notes:
S IN G LE P U L S E
(TH E R M A L R E S P O N S E )
1. D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
A
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Re ctangular Pulse D uratio n (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI9634G
600
500
400
300
200
100
0
L
I
V
D
D S
TO P
-4.1A
-5.2A
-8.2A
BOTTOM
D .U .T
R
G
V
D D
A
I
A S
D R IV E R
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
150
25
50
75
100
125
I
AS
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI9634G
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFI9634G
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
3.40 (.133)
4.80 (.189)
4.60 (.181)
ø
10.40 (.409)
3.10 (.123)
2.80 (.110)
2.60 (.102)
- A
-
3.70 (.145)
3.20 (.126)
LE A D AS S IG N M E N TS
1
2
3
- G A TE
7.10 (.280)
6.70 (.263)
- D R AIN
- S O U RC E
16.00 (.630)
15.80 (.622)
1.15 (.045)
N O TE S :
M IN.
1
D IM E N SIO N ING & TO LE R AN C ING
P ER AN S I Y14.5M , 1982
1
2
3
2
C O N TR O LLIN G D IM E N SION : IN C H .
3.30 (.130)
3.10 (.122)
- B
-
13.70 (.540)
13.50 (.530)
C
D
A
B
0.48 (.019)
0.44 (.017)
0.90 (.035)
3X
0.70 (.028)
3X
1.40 (.055)
3X
1.05 (.042)
2.85 (.112)
2.65 (.104)
0.25 (.010)
A
M
B
M
M IN IM U M C R EE P AG E
D IS TA NC E B E TW E E N
2.54 (.100)
2X
A -B-C -D
= 4.80 (.189)
Part Marking Information
TO-220 Fullpak
EXAMPLE : THIS IS AN IRFI840G
W ITH ASSEMBLY
A
LOTCODEE401
PART NUMBER
INTERNATIONAL
IRFI840G
RECTIFIER
LOGO
E4 01 9 24 5
ASSEM BLY
DATE CODE
LOT CODE
(YYW W )
YY YEAR
=
W W W EEK
=
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http://www.irf.com/
Data and specifications subject to change without notice.
8/96
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