IRFIZ34NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET型号: | IRFIZ34NPBF |
厂家: | Infineon |
描述: | HEXFET㈢ Power MOSFET |
文件: | 总9页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94840
IRFIZ34NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l IsolatedPackage
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.04Ω
G
l Lead-Free
ID = 21A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
21
15
A
100
PD @TC = 25°C
Power Dissipation
37
W
W/°C
V
Linear Derating Factor
0.24
± 20
110
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
16
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
3.7
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
4.1
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
65
11/13/03
IRFIZ34NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.052 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.04
Ω
V
S
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
Gate Threshold Voltage
2.0
6.5
4.0
Forward Transconductance
25
250
100
-100
34
6.8
14
V
DS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 16A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
7.0
49
31
40
VDD = 28V
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
7.5
Ciss
Coss
Crss
C
Input Capacitance
700
240
100
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
= 1.0MHz, See Fig. 5
= 1.0MHz
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
21
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
100
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.6
57 86
130 200
V
TJ = 25°C, IS = 11A, VGS = 0V
ns
TJ = 25°C, IF = 16A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ꢀ t=60s, =60Hz
Uses IRFZ34N data and test conditions
ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFIZ34NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
J= 175°C
T
TJ
= 25°C
1
0.1
A
1
0.1
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
I
= 26A
D
TJ = 25°C
T = 175°C
J
10
VDS = 25V
20µs PULSE WIDTH
10A
V
= 10V
GS
1
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFIZ34NPbF
1200
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 16A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
gd
ds
DS
DS
= C
1000
800
600
400
200
0
= C + C
C
ds
gd
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
100µs
T = 25°C
J
1ms
T
T
= 25°C
= 175°C
C
J
10ms
Single Pulse
V
GS
= 0V
A
1
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFIZ34NPbF
RD
VDS
25
20
15
10
5
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
10%
°
T , Case Temperature ( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
P
2
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ34NPbF
250
200
150
100
50
L
I
D
V
DS
TOP
6.5A
11A
BOTTOM 16A
D.U.T.
R
+
-
G
V
DD
I
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
V
= 25V
50
DD
0
A
175
t
p
25
75
100
125
150
V
Starting T , Junction Temperature (°C)
DD
J
V
DS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFIZ34NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFIZ34NPbF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
E XAMPL E : T H IS IS AN IR F I840G
WIT H AS S E MB L Y
PAR T NU MB E R
L OT CODE 3432
INT E R NAT IONAL
R E CT IF IE R
L OGO
IRF I840G
AS S E MB L E D ON WW 24 1999
IN T H E AS S E MB L Y L INE "K "
924K
32
34
DAT E CODE
YE AR 9 = 1999
WE E K 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
L OT CODE
L INE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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