IRFL4315PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFL4315PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95258
IRFL4315PbF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
Applications
l High frequency DC-DC converters
l Lead-Free
150V
185mW@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
SOT-223
Absolute Maximum Ratings
Parameter
Max.
2.6
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2.1
A
21
PD @TA = 25°C
Power Dissipation
2.8
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
6.3
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
Max.
45
Units
°C/W
Notes through are on page 8
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1
05/24/04
IRFL4315PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 1.6A
V(BR)DSS
Drain-to-Source Breakdown Voltage
150 ––– –––
––– 0.19 –––
––– ––– 185
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
3.0
––– 5.0
V
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 150V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 30V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
3.5
–––
–––
–––
–––
–––
–––
–––
––– –––
12 19
2.1 3.1
6.8 10
S
VDS = 50V, ID = 1.6A
ID = 1.6A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 120V
VGS = 10V
8.4 –––
21 –––
20 –––
19 –––
VDD = 75V
ID = 1.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 15Ω
VGS = 10V
VGS = 0V
VDS = 25V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 420 –––
––– 100 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
25 –––
pF
ƒ = 1.0MHz
––– 720 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ꢀ
–––
–––
48 –––
98 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
38
Units
mJ
EAS
IAR
3.1
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.6
21
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.5
––– 61 91
––– 160 240
V
TJ = 25°C, IS = 2.1A, VGS = 0V
TJ = 25°C, IF = 1.6A
ns
Qrr
nC di/dt = 100A/µs
2
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IRFL4315PbF
100
10
100
10
1
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
BOTTOM 5.5V
1
5.5V
5.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100.00
10.00
1.00
2.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
5.0
6.0
7.0
8.0
9.0
10.0
T , Junction Temperature
(
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFL4315PbF
12
10
8
10000
V
= 0V,
f = 1 MHZ
I = 1.6A
D
GS
C
= C + C , C SHORTED
iss
gs gd ds
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds gd
1000
100
10
C
C
iss
6
4
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
1000
0
2
4
6
8
10
12
14
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150
J
C
10
100µsec
°
T = 25
C
J
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
2.0
0.1
0.1
0.0
0.5
1.0
1.5
2.5
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFL4315PbF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
P
DM
0.02
0.01
1
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFL4315PbF
240
220
200
4000
3500
3000
2500
2000
1500
1000
500
V
= 10V
180
160
140
120
100
GS
I
= 2.6A
D
0
4.5
6.0
V
7.5
9.0
10.5
12.0
13.5
15.0
0
5
10
15
20
25
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
100
I
V
GS
D
3mA
TOP
1.4A
2.5A
3.1A
Charge
I
I
D
G
80
60
40
20
0
Current Sampling Resistors
BOTTOM
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
-
I
20V
Ω
0.01
t
p
25
50
75
100
125
150
I
AS
°
( C)
Starting Tj, Junction Temperature
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRFL4315PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A = AS S E MB L Y S IT E
CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WE E K
BOTTOM
TOP
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
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7
IRFL4315PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 7.8mH
RG = 25Ω, IAS = 3.1A.
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 1.6A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
8
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