IRFL9014PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFL9014PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95153
IRFL9014PbF
HEXFET® Power MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
D
VDSS = -60V
l
P-Channel
R
DS(on) = 0.50Ω
l Fast Switching
l Ease of Paralleling
l Lead-Free
G
ID = -1.8A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
andcost-effectiveness.
TheSOT-223packageisdesignedforsurface-mountusing
vapor phase, infra red, or wave soldering techniques. Its
uniquepackagedesignallowsforeasyautomaticpick-and-
place as with other SOT or SOIC packages but has the
addedadvantageofimprovedthermalperformancedueto
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
-1.8
-1.1
-14
Units
ID @ Tc = 25°C
ID @ Tc = 100°C
IDM
Continuous Drain Current, VGS @ -10 V
Continuous Drain Current, VGS @ -10 V
Pulsed Drain Current
A
PD @Tc = 25°C
PD @TA = 25°C
Power Dissipation
3.1
Power Dissipation (PCB Mount)**
Linear Derating Factor
2.0
W
0.025
0.017
-/+20
140
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
W/°C
V
VGS
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
-1.8
0.31
-4.5
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
mJ
V/ns
dv/dt
TJ, TSTG
-55 to + 150
300 (1.6mm from case)
°C
Thermal Resistance
Parameter
Junction-to-PCB
Junction-to-Ambient.(PCBMount)**
Typ.
–––
–––
Max.
40
60
Units
RθJC
RθJA
°C/W
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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1
4/20/04
IRFL9014PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.059 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.50
-2.0 ––– -4.0
Ω
V
S
VGS = -10V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = -25V, ID = 1.1A
VDS = -60V, VGS = 0V
VDS = -48V, VGS = 0V, TJ = 125°C
VGS = -20V
Forward Transconductance
1.3
––– –––
––– ––– -100
––– ––– -500
––– ––– -100
––– ––– 100
––– ––– 12
––– ––– 3.8
––– ––– 5.1
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID =-6.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS =-48V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
63 –––
9.6 –––
VDD = -30V
ID = -6.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24 Ω
RD = 4.0 Ω, See Fig. 10
31
–––
D
S
Betweenlead,6mm(0.25in)
LD
InternalDrainInductance
–––
4.0 –––
nH
from package and center
G
of die contact.
LS
InternalSourceInductance
–––
6.0 –––
Ciss
Coss
Crss
Input Capacitance
––– 270 –––
––– 170 –––
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
–––
31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-1ꢀ8
A
G
ISM
Pulsed Source Current
(Body Diode)
integralreverse
-14
S
p-njunctiondiode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
ForwardTurn-OnTime
––– ––– -5.5
––– 80 160
––– 0.096 0.19
V
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF =-6.7A
ns
µC
Qrr
ton
di/dt = 100A/µs
Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -6ꢀ7A, di/dt ≤90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
VDD=-25V, starting TJ = 25°C, L =50 mH
RG = 25Ω, IAS = -1.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFL9014PbF
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IRFL9014PbF
4
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IRFL9014PbF
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IRFL9014PbF
6
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IRFL9014PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A= ASSEMBLY SITE
CODE
DAT E CODE
(YYWW)
YY = YEAR
WW = WEEK
BOTTOM
TOP
P = DE S IGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
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IRFL9014PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
8
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INFINEON
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