IRFM260 [INFINEON]
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*); 晶体管N沟道（ BVDSS = 200V ， RDS（ON） = 0.060ohm ，ID = 35A * ）
| 型号： | IRFM260 |
| 厂家： | 
Infineon |
| 描述： | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*) |
| 文件： | 总8页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRFM260
N-CHANNEL
200Volt, 0.060Ω, HEXFET
Product Summary
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
Part Number
BVDSS
RDS(on)
ID
IRFM260
200V
0.060Ω
35A*
Features:
n
n
n
n
n
Hermetically Sealed
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability.They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelet
HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Pre-Radiation
Absolute Maximum Ratings
Parameter
= 10V, T = 25°C Continuous Drain Current
C
IRFM260
35*
Units
I
D
@ V
GS
A
I
@ V
= 10V, T = 100°C Continuous Drain Current
28
D
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
250
W
W/K ꢀ
V
D
C
2.0
V
±20
GS
E
Single Pulse Avalanche Energy
Avalanche Current
700
mJ
AS
I
35
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
25
mJ
AR
dv/dt
4.3
V/ns
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
STG
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
Weight
g
To Order
Previous Datasheet
Index
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IRFM260
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
=0 V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.24
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
—
—
—
—
—
—
0.060
0.068
4.0
V
V
= 10V, I = 28A
D
DS(on)
GS
GS
Ω
= 10V, I = 35A
D
V
2.0
22
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 28A
DS
DS
I
25
V
= 0.8 x Max Rating,V =0V
DS GS
DSS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
J
GS
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
230
40
V
= 20 V
GSS
GS
GS
nA
nC
I
V
= -20V
GSS
Q
V
= 10V, I = 35A
GS
V = Max Rating x 0.5
DS
g
D
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
gs
gd
Q
110
29
t
V
= 100V, I = 35A,
DD D
d(on)
t
Rise Time
120
110
92
R
= 2.35Ω
r
G
ns
t
Turn-Off Delay Time
d(off)
t
Fall Time
f
symbolshow-
Measuredfromdrainlead,
6mm(0.25in)frompackage
tocenterofdie.
Measuredfromsourcelead,
6mm(0.25in)frompackage
ModifiedMOSFET
ingtheinternalinductances.
L
Internal Drain Inductance
—
D
nH
L
Internal Source Inductance
—
8.7
—
S
tosourcebondingpad.
C
C
C
Input Capacitance
—
—
—
5100
1100
280
—
—
—
V
= 0V, V
= 25 V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
35*
S
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
A
Pulse Source Current (Body Diode)
180
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
420
4.9
V
T = 25°C, I = 35A, V
= 0V
j
SD
S
GS
ns
T = 25°C, I = 35A, di/dt ≤ 100A/µs
j
rr
F
Q
µC
V
DD
≤ 50V
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
thJC
thCS
thJA
K/W ꢀ Mounting surface flat, smooth, and greased
Junction-to-Ambient
48
Typical socket mount
To Order
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IRFM260
1 0 0 0
1 0 0 0
1 0 0
1 0
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
1 0 0
1 0
1
4.5V
4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 150°C
T
= 25°C
C
J
1
A
1 0 0
A
1 0 0
0.1
1
1 0
0.1
1
1 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 150oC
TJ = 25oC
1 0 0 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 46A
D
1 0 0
1 0
1
T
= 150°C
J
T
= 25°C
J
V
= 50V
D S
20µs PU LSE W ID TH
V
= 10V
GS
1 0 A
A
4
5
6
7
8
9
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
VG S , Ga te-to-So urce Voltage (V )
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order
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Index
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IRFM260
2 0
1 6
1 2
8
1 2 0 0 0
1 0 0 0 0
8 0 0 0
6 0 0 0
4 0 0 0
2 0 0 0
0
I
= 35A
D
V
C
C
C
=
=
=
=
0 V ,
f = 1 M H z
GS
iss
C
C
C
+
+
C
C
,
C
S H O R T E D
gs
gd
d s
gd
ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
rss
oss
gd
C
C
is s
o s s
C
rs s
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
1
1 0
1 0 0
Q G , Total Gate Charge (nC)
VD S , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1 0 0
1 0
1 0 0 0
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
1 0 0
1 0
1
T
= 150°C
J
100µs
T
= 25°C
J
1m s
10 ms
T
T
= 25°C
C
J
= 150°C
V
= 0V
S ingle Pulse
GS
1
A
A
0. 0
1. 0
2. 0
3. 0
4. 0
1
1 0
1 0 0
1 0 0 0
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
To Order
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Index
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IRFM260
RD
VDS
VGS
10V
5 0
4 0
3 0
2 0
1 0
0
D.U.T.
LIM ITE D B Y P ACK AGE
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
A
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
V
GS
TC , Case Temperature (°C)
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D = 0.50
0.20
0. 1
0.10
0.05
0.02
0.01
P
D M
0 . 0 1
t
SINGLE PULSE
1
(THERMAL RESPONSE)
t
2
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
D M
J
th JC
1
A
0 . 0 0 1
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0. 1
1 0
t1 , Re ctang ular Pulse Duration (sec )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
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IRFM260
1 6 0 0
1 2 0 0
8 0 0
4 0 0
0
I
D
TOP
16A
22A
B OTTOM 35A
15 V
D R IV ER
L
V
D S
R
D .U .T
+
G
V
D D
-
I
A
A S
2 0V
0 .0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
A
1 5 0
2 5
5 0
7 5
1 0 0
1 2 5
V
(BR)DSS
Starting TJ , Junction Temperature (°C)
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
To Order
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IRFM260
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
To Order
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IRFM260
Case Outline and Dimensions TO-254AA
.12 ( .005 )
-B-
13.84
13.59
(
(
.545 )
.535 )
6.60 ( .260 )
6.32 ( .249 )
3 .78 ( .1 49
3 .53 ( .1 39
)
)
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
-B-
1 .27 ( .0 50
1 .02 ( .0 40
)
)
- A-
3.78 ( .149 )
3.53 ( .139 )
6.60 ( .260 )
6.32 ( .249 )
1.27 ( .050 )
1.02 ( .040 )
-A-
20.32 ( .800
20.07 ( .790
)
)
1 7 .40 ( .6 85
1 6 .89 ( .6 65
)
)
13.84 ( .545 )
13.59 ( .535 )
21.98 ( .865 )
20.95 ( .825 )
20.32 ( .800
20.07 ( .790
)
)
1.52 ( .060 ) R
M IN.
17.40
16.89
(
(
.685
.665
)
)
13.84 ( .545 )
13.59 ( .535 )
LEGEND
1 - COLLECTOR
1
2
3
W
-C-
31.40 ( 1.235 )
30.39 ( 1.199 )
2 - EMITTER
3 - GATE
3.2
3.1
1
2
3
-C-
1 .14 ( .0 45
0 .89 ( .0 35
)
)
3X
4.01
3.61
(
(
.158 )
.142 )
4.83 ( .190
3.81 ( .150
)
)
3.81 ( .150
2X
)
.50 ( .020 )
.25 ( .010 )
M
M
C
C
A M B
1 .14 ( .0 45 )
0 .89 ( .0 35 )
NOTES
1. DIMENSIONING
2. ALL DIM ENSIONS ARE SHOW N IN MILLIMETERS
3. LEADFORM IS AVAILABLE IN EITHER ORIENTATION :
3.1 EXAM PLE : IRFM4500
3.2 EXAM PLE : IRFM450U
:
3X
3.81 ( .150 )
LEGEND
&
TOLERANCING PER ANSI Y14.5M-1982.
INCHES ).
3 .81 ( .1 50 )
2X
1 - COLLECTOR
2 - EM ITTER
3 - GATE
(
.50
.25
(
(
.020 )
.010 )
M
M
C
C
A M B
NOTES:
1. DIMENSIONING
2. ALL DIM ENSIONS ARE SHOW N IN MILLIMETERS
&
TOLERANCING PER ANSI Y14.5M, 1982.
INCHES ).
(
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sand-
blasted, machined, or have other operations perfomed on
them which will produce beryllia or beryllium dust. Fur-
thermore, beryllium oxide packages shall not be placed in
acids that will produce fumes containing beryllium.
Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
I
SD
≤ 35A, di/dt ≤ 130 A/µs,
≤ BV , T ≤ 150°C
@ V
= 50 V, Starting T = 25°C,
J
DD
= [0.5
E
L
(I 2) ]
V
DD
AS
*
* L
DSS
J
Refer to current HEXFET reliability report.
Peak I = 35A, V
=10 V, 25 ≤ R ≤ 200Ω
G
Suggested RG = 2.35Ω
L
GS
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ꢀ K/W = °C/W
* ID current limited by pin diamete ( Die Current = 46A )
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Data and specifications subject to change without notice.
7/96
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