IRFM450PBF [INFINEON]
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
| 型号： | IRFM450PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总7页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90493F
IRFM450
JANTX2N7228
JANTXV2N7228
POWER MOSFET
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/592
500V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number
RDS(on)
ID
IRFM450
0.415 Ω
12A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
12
8.0
48
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
150
1.2
±20
750
12
W
W/°C
V
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
AS
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
02/05/02
IRFM450
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
500
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.68
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
6.5
—
—
—
—
—
—
—
0.415
0.515
4.0
V
= 10V, I = 8.0A
DS(on)
GS D
➀
Ω
V
= 10V, I = 12A
D
GS
V
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 8.0A ➀
DS
V
DS
I
25
250
= 400V ,V =0V
DSS
DS GS
µA
—
V
= 400V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
120
19
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 12A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 250V
DS
70
t
t
t
t
35
V
= 250V, I = 12A,
DD
GS
D
190
170
130
—
V
=10V, R = 2.35Ω
G
ns
d(off)
f
Measured from drain lead (6mm/0.25in. from
package)tosourcelead(6mm/0.25in. frompackage)
L
+ L
Total Inductance
S
D
nH
C
C
C
Input Capacitance
—
—
—
2700
600
240
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
12
48
1.7
S
A
V
SM
T = 25°C, I = 12A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
1600 nS
14 µC
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Case-to-Sink
—
—
—
0.21
0.83
—
thJC
thJCS
°C/W
R
Junction-to-Ambient
—
—
48
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFM450
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRFM450
13
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRFM450
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFM450
15V
DRIVER
L
V
D S
D.U .T
AS
.
R
G
+
-
V
D D
I
A
20V
1
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
0
1V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFM450
Footnotes:
➀➀ I
SD
≤ 12A, di/dt ≤ 130A/µs,
➀➀ Repetitive Rating; Pulse width limited by
V
≤ 500V, T ≤ 150°C
maximum junction temperature.
DD
J
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀V
= 50V, starting T = 25°C, L= 10.4mH
J
DD
Peak I =12A, V
= 10V
L
GS
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
C
4.06 [.160]
3.56 [.140]
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONF OR MS T O JE DE C OU T L INE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
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7
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