IRFMJ044 [INFINEON]

POWER MOSFET SURFACE MOUNT (D3 PAK); 功率MOSFET表面贴装（ D3 PAK ）


型号：	IRFMJ044
厂家：	Infineon
描述：	POWER MOSFET SURFACE MOUNT (D3 PAK) 功率MOSFET表面贴装（ D3 PAK ）晶体晶体管功率场效应晶体管开关脉冲
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PD-97258

IRFMJ044

POWER MOSFET

SURFACE MOUNT (D3 PAK)

60V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFMJ044

0.04 Ω

35A*

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET transistors also feature all of the well-established

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical

parameter temperature stability. They are well-suited for

applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required. The HEXFET transistor’s totally

isolated package eliminates the need for additional

isolating material between the device and the heatsink.

This improves thermal efficiency and reduces drain

capacitance.

D3 PAK

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Screened to JANTX Level per

MIL-PRF-19500

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

140

@ T = 25°C

125

W/°C

1.0

±20

340

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

12.5

4.5

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

Weight

STG

9.3 (Typical)

*Current is limited by package

For footnotes refer to the last page

www.irf.com

09/13/06

IRFMJ044

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.68

—

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.04

0.05

4.0

—

250

= 10V, I = 28A

DS(on)

Ω

= 10V, I = 35A

2.0

—

S ( )

= V , I = 250µA

GS(th)

Ω

> 15V, I

= 28A Ã

= 48V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

—

100

-100

130

—

= 20V

= -20V

GSS

=10V, I = 35A

d(on)

GS D

= 30V

= 30V, I = 35A,

=10V, R = 9.1Ω

d(off)

2400

1100

230

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

GS DS

Output Capacitance

Reverse Transfer Capacitance

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

35*

140

2.5

220

1.6

µC

T = 25°C, I = 35A, V

= 0V Ã

T = 25°C, I = 35A, di/dt ≤ 100A/µs

≤ 50V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

*Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thJCS

thJA

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

—

0.21

—

1.0

—

°C/W

Typical socket mount

For footnotes refer to the last page

www.irf.com

IRFMJ044

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFMJ044

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFMJ044

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFMJ044

15V

DRIVER

D.U.T

20V

0.01Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFMJ044

Footnotes:

Â I

≤ 35A, di/dt ≤ 100A/µs,

Repetitive Rating; Pulse width limited by

maximum junction temperature.

≤ 60V, T ≤ 150°C

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 25V, starting T = 25°C, L= 0.5mH

Peak I = 35A, V

= 10V

Case Outline and Dimensions — D3 PAK

PIN ASS IGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

1 2 3

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 09/2006

www.irf.com

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