IRFML8244 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFML8244
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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PD - 97587A

IRFML8244TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 20

R_{DS(on) max}

(@V_GS= 10V)



R_{DS(on) max}

(@V_GS= 4.5V)



Micro3 (SOT-23)

IRFML8244TRPbF

Application(s)

Load/ System Switch

Features and Benefits

Features

Benefits

Low R_DS(on)(  24m)

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Consumer qualification

results in Easier manufacturing

Environmentally friendly

Increased reliability



Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.8

4.6

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

0.80

0.01

± 20

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

02/29/12

IRFML8244TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

–––

1.35

–––

0.02

–––

V_GS= 0V, I_D= 250μA

V_(BR)DSS/T_J

Breakdown Voltage Temp. Coefficient

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 5.8A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage



V_GS= 4.5V, I_D= 4.6A

V_GS(th)

I_DSS

1.7

–––

1.6

–––

5.4

1.0

0.81

2.7

2.1

9.0

2.9

430

110

2.35

1.0

_DS= V_GS, I_D= 10μA

_DS= 20V, V_GS= 0V

Drain-to-Source Leakage Current

μA

150

100

-100

–––

_DS= 20V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

V_GS= 20V

_GS= -20V

R_G



gfs

Q_g

V_DS= 10V, I_D= 5.8A

I_D= 5.8A

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS=13V

V_GS= 10V

_DD=13V

I_D= 1.0A

_G= 6.8

V_GS= 10V

Rise Time

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

_GS= 0V

Output Capacitance

_DS= 10V

Reverse Transfer Capacitance

ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

1.25

(Body Diode)

showing the

I_SM

Pulsed Source Current

integral reverse

–––

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.2

T_J= 25°C, I_S= 5.8A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 20V, I_F=5.8A

di/dt = 100A/μs

Q_rr

4.2

6.3

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IRFML8244TRPbF

100

VGS

15V

10V

4.5V

4.0V

3.8V

3.5V

3.3V

3.0V

VGS

15V

10V

4.5V

4.0V

3.8V

3.5V

3.3V

3.0V

TOP

BOTTOM

3.0V

60μs PULSE WIDTH



60μs PULSE WIDTH



Tj = 25°C

Tj = 150°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

1.6

1.4

1.2

1.0

0.8

0.6

= 5.8A

= 10V

= 150°C

= 25°C

= 15V



60μs PULSE WIDTH

0.1

2.0

2.5

3.0

3.5

4.0

4.5

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

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IRFML8244TRPbF

10000

14.0

12.0

10.0

8.0

= 0V,

= C

f = 1 MHZ

= 5.8A

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

= 20V

= 13V

= 5.0V

1000

100

iss

6.0

oss

rss

4.0

2.0

0.0

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100μsec

= 150°C

1msec

10msec

= 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

, Source-to-Drain Voltage (V)

0.10

1.0

100

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRFML8244TRPbF

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width µs

Duty Factor 

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Ambient Temperature (°C)

10%

Fig 9. Maximum Drain Current vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

1000

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

0.01

0.001

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFML8244TRPbF

= 5.8A

Vgs = 4.5V

= 125°C

Vgs = 10V

= 25°C

10 12 14 16 18 20

, Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs. Drain

Fig 12. Typical On-Resistance vs. Gate

Current

Voltage

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

.3F

V_GS

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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IRFML8244TRPbF

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

1000

800

600

400

200

= 10μA

= 250μA

-75 -50 -25

25 50 75 100 125 150

1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

, Temperature ( °C )

Time (sec)

Fig 16. Typical Power vs. Time

Fig 15. Typical Threshold Voltage vs.

Junction Temperature

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IRFML8244TRPbF

Micro3 (SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MILLIMETERS

INCHES

SYMBOL

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

0.95

1.90

0.40

0.54

0.25

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

BSC

0.60

REF

BSC

MIN

MAX

0.0004

0.15 [0.006]

B A

0.10 [0.004]

0.20 [0.008]

B A

NOTES:

REF

BSC

Recommended Footprint

0.972

0.950

2.742

0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

3X L

1.900

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

DATE CODE MARKING INSTRUCTIONS

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRFML8244TRPbF

Micro3Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

8.3 ( .326 )

3.45 ( .136 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRFML8244TRPbF

Orderable part number

Package Type

Micro3 (SOT-23)

Standard Pack

Note

Form

Tape and Reel

Quantity

IRFML8244TRPbF

3000

Qualification information^†

Cons umer^††

(per JEDE C JE S D47F ^†††guidelines )

Qualification level

MS L1

Moisture Sensitivity Level

RoHS compliant

Micro3 (SOT-23)

(per IPC/JE DE C J-S TD-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/2012

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFML8244 [INFINEON]

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