IRFN140 [INFINEON]

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A); 功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.077ohm ，ID = 28A ）


型号：	IRFN140
厂家：	Infineon
描述：	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.077ohm ，ID = 28A ）晶体晶体管开关脉冲
文件：	总6页 (文件大小：185K)
中文：	中文翻译
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Provisional Data Sheet No. PD-9.1546

HEXFET^®POWER MOSFET

IRFN140

N-CHANNEL

Product Summary

100 Volt, 0.077Ω HEXFET

Part Number

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

IRFN140

100V

0.077Ω

28A

Features:

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFN140

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

112

125

1.0

@ T = 25°C

W/K ➄

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

250

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

12.5

dv/dt

5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 seconds)

2.6 (typical)

Package Mounting Surface Temperature

Weight

300

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IRFN140 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

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Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.13

DSS

Voltage

➃

= 10V, I = 20A

Static Drain-to-Source

On-State Resistance

GateThreshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

9.1

—

0.077

0.125

4.0

—

DS(on)

Ω

S ( )

= 10V, I = 28A

= V , I = 250µA

GS(th)

Ω

> 15V, I

= 20A ➃

= 0.8 x Max Rating,V = 0V

DSS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

Internal Drain Inductance

—

2.4

—

2.0

100

-100

30.7

145

105

—

= 20V

= -20V

GSS

=10V, I = 28A

d(on)

d(off)

= Max. Rating x 0.5

see figures 6 and 13

V = 50V, I = 28A,

= 9.1Ω,VGS = 10V

see figure 10

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

4.1

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

1600

550

120

—

= 0V, V

f = 1.0 MHz

see figure 5

= 25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

112

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.5

400

2.9

µC

T = 25°C, I = 28A, V

= 0V ➃

T = 25°C, I = 28A, di/dt ≤ 100A/µs

≤ 50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

1.0

thJC

Junction-to-PC Board

—

TBD

—

K/W Soldered to a copper clad PC board

thJ-PCB

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IRFN140 Device

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Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

= 28A

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

= 28A

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

= 25 C

= 150 C

Single Pulse

100

1000

, Drain-to-Source Voltage (V)

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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IRFN140 Device

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0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

+ T

thJC

0.1

0.01

0.00001

0.0001

0.001

0.01

t , Rectangular Pulse Duration (sec)

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12c — Max. Avalanche Energy vs. Current

Fig. 13a — Gate Charge Test Circuit

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➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

➁ @ V

= 25V, Starting T = 25°C,

= [0.5

(I ) [BV

/(BV

-V )]

DSS DD

DSS

Peak I = 28A, V

= 10V, 25 ≤ R ≤ 200Ω

➂ I

≤ 28A, di/dt≤ 170A/µs,

≤ BV

, T ≤ 150°C

DSS J

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ K/W = °C/W

W/K = W/°C

Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions — SMD-1

All dimensions in millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

9/96

To Order

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