IRFN3710PBF [INFINEON]
Power Field-Effect Transistor, 45A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN;型号: | IRFN3710PBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 45A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN 晶体 晶体管 |
文件: | 总4页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1417
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRFN3710
N-CHANNEL
Product Summary
100 Volt, 0.028Ω, HEXFET
Part Number
BVDSS
RDS(on)
ID
Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design for which HEXFETs
are well known, provides the designer with an ex-
tremely efficient device for use in a wide variety of
applications.
IRFN3710
100V
0.028Ω
45A
Features:
n
n
n
n
n
n
n
n
Surface Mount
Small Footprint
Alternative to TO-3 Package
Hermetically Sealed
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Lightweight
The Surface Mount Device 1 (SMD-1) package rep-
resents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
give designers the extra flexibility they need to in-
crease circuit board density.International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
Absolute Maximum Ratings
Parameter
= 10V, T = 25°C Continuous Drain Current
C
IRFN3710
45
Units
I
D
@ V
GS
A
I
D
@ V
= 10V, T = 100°C Continuous Drain Current
28
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
D
125
W
W/K ꢀ
V
C
1.0
V
±20
GS
E
Single Pulse Avalanche Energy
Avalanche Current
690
mJ
AS
I
27
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
12.5
5.0
mJ
AR
dv/dt
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
Package Mounting Surface Temperature
Weight
STG
300 (for 5 sec.)
2.6 (typical)
To Order
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IRFN3710 Device
Index
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
GS
= 0V, I = 1.0 mA
D
DSS
∆BV
/∆T Temp. Coefficient of Breakdown Voltage
—
—
0.120
—
—
0.028
V/°C Reference to 25°C, I = 1.0 mA
DSS
J
D
R
Static Drain-to-Source
V
= 12V, I =28A
GS D
DS(on)
Ω
On-State Resistance
—
2.0
24
—
—
—
—
—
—
0.032
4.0
—
V
= 12V, I = 45A
GS D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
V
V
= V , I = 250 mA
GS(th)
fs
DS
GS
D
g
S (
)
V
> 15V, I
= 28A
DS
DS
I
25
V
=0.8 x Max Rating,V =0V
DS GS
DSS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
J
GS
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
100
-100
190
26
V
= 20V
GS
GSS
GSS
nA
nC
V
= -20V
GS
Q
Q
Q
—
V
=10V, I =45 A
GS D
V = Max. Rating x 0.5
DS
g
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
—
gs
—
82
gd
d(on)
r
t
t
t
t
14
59
58
48
8.7
—
V
= 50V, I =45A,
DD D
Rise Time
—
ns
R
= 4.3Ω
G
Turn-Off Delay Time
—
d(off)
f
Fall Time
—
Measured from the
L
Internal Drain Inductance
—
Modified MOSFET
symbol showing the
internal inductances.
D
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nH
pF
L
Internal Source Inductance
—
8.7
—
S
C
C
C
Input Capacitance
—
—
—
3000
640
—
—
—
V
= 0V, V
DS
f = 1.0 MHz
= 25V
iss
GS
Output Capacitance
oss
rss
Reverse Transfer Capacitance
330
To Order
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IRFN3710 Device
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
45
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
Pulse Source Current (Body Diode)
180
A
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.3
210
1.7
V
T = 25°C, I = 45A, V
= 0V
j
SD
S
GS
ns
µC
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
rr
F
Q
V
≤ 50V
DD
RR
t
Forward Turn-OnTime Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units Test Conditions
R
R
Junction-to-Case
—
—
—
1.0
—
thJC
K/W ꢀ
Junction-to-PC Board
TBD
Soldered to a copper-clad PC board
thJ-PCB
Repetitive Rating; Pulse width limited by
maximum junction temperature.
I
≤ 45A, di/dt ≤ 460 A/µs,
SD
V
≤ BV
, T ≤ 150°C
DSS J
DD
Refer to current HEXFET reliability report.
Suggested RG = 2.35Ω
@ V
= 25V, Starting T = 25°C,
J
DD
= [0.5
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
E
L
(I 2) [BV
/(BV
-V )]
DSS DD
G
AS
*
*
*
DSS
L
ꢀ K/W = °C/W
Peak I = 45A, V
= 10V, 25 ≤ R ≤ 200Ω
L
GS
W/K = W/°C
To Order
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IRFN3710 Device
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
To Order
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