IRFNG50 [INFINEON]
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A); 功率MOSFET N沟道（ BVDSS = 1000V ， RDS（ON） = 2.0ohm ，ID = 5.5A ）
| 型号： | IRFNG50 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) |
| 文件： | 总6页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1556
HEXFET® POWER MOSFET
IRFNG50
N-CHANNEL
1000 Volt, 2.0Ω HEXFET
Product Summary
Part Number
BVDSS
RDS(on)
ID
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
IRFNG50
1000V
2.0Ω
5.5A
Features:
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
Absolute Maximum Ratings
Parameter
= 10V, T = 25°C Continuous Drain Current
C
IRFNG50
5.5
Units
I
D
@ V
GS
A
I
@ V
= 10V, T = 100°C Continuous Drain Current
3.5
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
22
DM
@ T = 25°C
P
150
W
W/K ➄
V
D
C
1.2
V
±20
GS
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
860
5.5
mJ
AS
AR
I
A
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
15.0
mJ
AR
dv/dt
1.0
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
(for 5 seconds)
2.6 (typical)
Package Mounting Surface Temperature
Weight
300
To Order
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IRFNG50 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Index
Next Data Sheet
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
1000
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T Temperature Coefficient of Breakdown
1.4
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
2.0
5.2
—
—
—
—
—
—
—
2.0
2.25
4.0
—
25
250
V
= 10V, I = 3.5A
= 10V, I = 5.5A
DS(on)
GS D
➃
Ω
V
S ( )
V
GS D
V
g
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
V
> 15V, I
= 3.5A ➃
DS
DS
I
V
= 0.8 x Max Rating,V = 0V
DSS
DS
GS
µA
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
87
8.7
49
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
200
20
110
30
44
210
60
V
= 20V
GS
GSS
nA
nC
I
V
GS
= -20V
GSS
Q
Q
Q
V
=10V, I = 5.5A
GS D
= Max. Rating x 0.5
see figures 6 and 13
V = 500V, I = 5.5A,
DD
g
gs
gd
V
DS
t
d(on)
D
t
R
G
= 2.35Ω, VGS = 10V
r
ns
t
d(off)
t
L
see figure 10
f
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
—
D
S
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
6.5
—
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
2400
240
80
—
—
—
V
= 0V, V
f = 1.0 MHz
see figure 5
= 25V
DS
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
5.5
22
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
1200 ns
8.4 µC
V
T = 25°C, I = 5.5A, V
= 0V ➃
GS
j
SD
rr
RR
S
T = 25°C, I = 5.5A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
0.83
thJC
Junction-to-PC Board
—
TBD
—
K/W Soldered to a copper clad PC board
thJPCB
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IRFNG50 Device
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Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
I
= 5.5A
D
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
I
= 5.5A
D
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFNG50 Device
Index
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100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
T
= 25°C
°
= 150 C
C
T
J
Single Pulse
0.1
10
100
1000
10000
V
, Drain-to-Source Voltage (V)
DS
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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IRFNG50 Device
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1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.1
0.001
0.00001
0.0001
0.001
0.01
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12a — Unclamped Inductive Test Circuit
PEAK I = 5.5A
L
V
= 50V
DD
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁ @ V
= 50V, Starting T = 25°C,
J
DD
= [0.5
2
E
L
(I ) [BV
/(BV
-V )]
DSS DD
G
AS
*
*
*
DSS
= 10V, 25 ≤ R ≤ 200Ω
L
Peak I = 5.5A, V
L
GS
➂ I
SD
≤ 5.5A, di/dt ≤ 120A/µs,
V
≤ BV
, T ≤ 150°C
DSS J
DD
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
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http://www.irf.com/
Data and specifications subject to change without notice.
9/96
To Order
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