IRFP044N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.020ohm ，ID = 53A ）
| 型号： | IRFP044N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) |
| 文件： | 总8页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1410A
IRFP044N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.020Ω
ID = 53A
l Fully Avalanche Rated
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
53
37
A
180
PD @TC = 25°C
Power Dissipation
120
W
W/°C
V
Linear Derating Factor
0.77
± 20
230
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
28
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
12
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
1.3
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
8/25/97
IRFP044N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.020
Ω
V
S
VGS = 10V, ID = 29A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
16
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 61
––– ––– 13
––– ––– 24
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
12 –––
80 –––
43 –––
52 –––
VDD = 28V
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
RD = 0.98Ω, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
5.0
13
–––
–––
–––
–––
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1500 –––
––– 450 –––
––– 160 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
53
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 180
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 72 110
––– 210 310
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 28A
ns
Qrr
ton
µC di/dt = -100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ46N data and test conditions
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFP044N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs P ULSE WIDTH
T
= 25°C
T
= 175°C
C
C
1
A
100
1
A
0.1
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 46A
D
T
= 25°C
J
1 0 0
1 0
1
T
= 175°C
J
V
= 25V
DS
V
= 10V
20µs P ULSE W ID TH
GS
A
1 0 A
4
5
6
7
8
9
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFP044N
20
16
12
8
2800
I
= 28A
D
V
C
C
C
= 0V,
f = 1M Hz
GS
iss
= C
+ C
+ C
,
C
ds
SHORTE D
V
V
= 44V
= 28V
gs
gd
D S
D S
= C
= C
2400
2000
1600
1200
800
400
0
rss
o ss
gd
ds
g d
C
C
is s
o s s
4
C
rs s
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
10
20
30
40
50
60
1
10
100
Q G , Total Gate Charge (nC)
VD S , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1000
100
10
OP ERA TION IN THIS A REA LIM ITE D
B Y RD S(o n)
10 µs
1 0 0
T
= 175°C
J
10 0µs
T
= 25°C
J
1 0
1m s
10 m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
V
= 0V
G S
1
1
A
A
1
10
100
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
V
, Drain-to-Source Voltage (V)
VS D , Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRFP044N
RD
VDS
60
50
40
30
20
10
0
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
10%
°
T , Case Temperature ( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
DM
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP044N
L
V
500
400
300
200
100
0
DS
I
D
TOP
11A
D.U.T.
20A
R
G
+
-
BOTTOM 28A
V
DD
I
10 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
= 25V
50
D D
A
175
25
75
100
125
150
V
Starting TJ , Junction Temperature (°C)
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
-
10 V
V
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFP044N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFP044N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D
-
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
0 .25 (.0 1 0)
M
D
B
M
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
- B
-
- A
-
5 .5 0 (.2 1 7 )
4
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
NOTES:
5. 50 (.2 17 )
4. 50 (.1 77 )
2 X
1
DIMENSIONING & TOLERAN CING
PER AN SI Y14.5M, 1982.
CONTROLLING DIMENSION : IN CH .
CONFORM S TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C
-
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
LEAD ASSIGN MENTS
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
0 .8 0 (. 03 1 )
0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
1 .0 0 (.0 39 )
3 X
3 X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2 X
2.6 0 (.10 2 )
2.2 0 (.08 7 )
0 .25 (.0 10 )
C
A
S
M
5 .45 (.2 1 5)
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
2 X
Part Marking Information
TO-247AC
E XAM P LE : THIS IS AN IRFPE 30
A
W ITH AS SE M BLY
LOT C ODE 3A 1Q
P ART NUM B ER
INTE RNA TIONA L
IR FP E30
RE CTIFIE R
LOGO
3A 1Q 9302
DA TE C ODE
(YYW W )
A SSE M BLY
LOT CODE
YY
= YE AR
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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