IRFP1405 [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRFP1405 |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总9页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
HEXFET® Power MOSFET
Features
D
●
●
●
●
●
Advanced Process Technology
VDSS = 55V
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
RDS(on) = 5.3mΩ
G
Repetitive Avalanche Allowed up to Tjmax
ID = 95A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientandreliabledeviceforuseinAutomotiveapplicationsand
a wide variety of other applications.
S
D
G
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
I
I
I
@ T = 25°C
C
160
110
95
D
D
D
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
@ T = 100°C
C
A
@ T = 25°C
C
640
310
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
2.0
± 20
W/°C
V
V
GS
EAS (Thermally limited)
530
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
1060
IAR
See Fig.12a, 12b, 15, 16
-55 to + 175
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.49
–––
40
Units
RθJC
Rθcs
RθJA
Junction-to-Case *
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient *
0.24
–––
°C/W
HEXFET® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
www.irf.com
1
12/22/03
IRFP1405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
4.2
–––
–––
–––
–––
–––
–––
120
30
5.3
4.0
VGS = 10V, ID = 95A
VGS(th)
V
S
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
77
–––
20
V
DS = 25V, ID = 95A
DS = 55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
V
250
200
-200
180
–––
–––
–––
–––
–––
–––
–––
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
ID = 95A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 44V
VGS = 10V
53
12
VDD = 28V
Rise Time
160
140
150
5.0
ID = 95A
td(off)
tf
Turn-Off Delay Time
ns RG = 2.6 Ω
VGS = 10V
Fall Time
LD
D
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
13
–––
S
and center of die contact
Ciss
Input Capacitance
––– 5600 –––
––– 1310 –––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
––– 6550 –––
––– 920 –––
350
–––
pF ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
––– 1750 –––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
95
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
640
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
70
1.3
110
260
V
T = 25°C, I = 95A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 95A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
170
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 95A, VGS =10V. Part not
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
recommended for use above this value.
This value determined from sample failure population. 100%
tested to this value in production.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
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IRFP1405
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
1
10
1
100
1
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
1000
T
= 25°C
T
= 25°C
J
J
120
100
80
60
40
20
0
T
= 175°C
J
100
T
= 175°C
J
V
= 25V
DS
V
= 10V
DS
≤
60µs PULSE WIDTH
380µs PULSE WIDTH
10
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
0
20
40
60
80
100
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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3
IRFP1405
10000
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 95A
D
V
= 44V
C
C
C
+ C , C
SHORTED
DS
VDS= 28V
iss
gs
gd
ds
= C
rss
oss
gd
8000
6000
4000
2000
0
= C + C
ds
gd
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
Q
80
120
160
200
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
DS
V
, Source-toDrain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP1405
200
150
100
50
2.5
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 95A
D
V
= 10V
GS
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.2529 0.00080
0.2368 0.014283
0.02
0.01
0.01
0.001
τJ
τ
Cτ
τJ
τ
τ
1 τ1
Ci= τi/Ri
2τ2
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP1405
2000
1500
1000
500
0
15V
I
D
TOP
16A
20A
95A
DRIVER
+
L
V
BOTTOM
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
1.5
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
1K
T
J
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRFP1405
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
∆
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
600
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
BOTTOM 1% Duty Cycle
= 95A
Single Pulse
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
500
400
300
200
100
0
I
D
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRFP1405
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRFP1405
TO-247AC Package Outline
Dimensions are shown in millimeters
TO-247AC Part Marking Information
Notes: T his part marking information applies to devices produced before02/26/2001 or for
parts manufactured in GB.
E XAMPL E: T HIS IS AN IR F PE 30
WIT H ASS EMBLY
LOT CODE 3A1Q
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
3A1Q
9302
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WE EK
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WIT H ASS EMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
035H
57
56
DATE CODE
YEAR 0 = 2000
WE EK 35
AS S E MB LY
LOT CODE
LINE H
TO-247AC packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
www.irf.com
9
相关型号：
IRFP140PBF
Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.
INFINEON
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