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IRFP150N [INFINEON]

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.035W ，ID = 42A ）
IRFP150N
型号： IRFP150N
厂家： Infineon    Infineon
描述：

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)
功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.035W ，ID = 42A ）

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PD- 91503C  
IRFP150N  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 100V  
R
DS(on) = 0.036W  
l Fully Avalanche Rated  
G
ID = 42A  
Description  
S
FifthGenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-247 package is preferred for commercial-  
industrial applications where higher power levels  
preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package  
because of its isolated mounting hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
42  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ꢀ  
30  
A
140  
160  
1.1  
± 20  
420  
22  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Currentꢀ  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
16  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RqJC  
RqCS  
RqJA  
0.95  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1
IRFP150N  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
100 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mAꢀ  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 0.036 W  
VGS = 10V, ID = 23A „  
VDS = VGS, ID = 250µA  
VDS = 25V, ID = 22Aꢀ  
VDS = 100V, VGS = 0V  
VDS = 80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
2.0  
14  
––– 4.0  
––– –––  
V
S
Forward Transconductance  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
––– ––– 110  
––– ––– 15  
––– ––– 58  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = -20V  
Qg  
ID = 22A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 80V  
VGS = 10V, See Fig. 6 and 13 „ꢀ  
–––  
–––  
–––  
–––  
11 –––  
56 –––  
45 –––  
40 –––  
VDD = 50V  
ID = 22A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 3.6W  
RD = 2.9W, See Fig. 10 „ꢀ  
Between lead,  
6mm (0.25in.)  
D
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
5.0 –––  
nH  
pF  
G
from package  
–––  
13  
and center of die contact  
VGS = 0V  
S
Ciss  
Coss  
Crss  
Input Capacitance  
––– 1900 –––  
––– 450 –––  
––– 230 –––  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5ꢀ  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
42  
––– –––  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode) ꢀ  
integral reverse  
140  
S
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 180 270  
––– 1.2 1.8  
V
TJ = 25°C, IS =23A, VGS = 0V „  
ns  
TJ = 25°C, IF = 22A  
Qrr  
ton  
µC di/dt = 100A/µs „ ꢀ  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
 Repetitive rating; pulse width limited by  
„ Pulse width £300µs; duty cycle £2%.  
ꢀ Uses IRF1310N data and test conditions  
max. junction temperature. ( See fig. 11 )  
‚ Starting TJ = 25°C, L = 1.7mH  
RG = 25W, IAS = 22A. (See Figure 12)  
ƒ I £22A, di/dt £180A/µs, VDD £V(BR)DSS  
,
SD  
TJ £175°C  
2
www.irf.com  
IRFP150N  
1000  
100  
10  
1000  
100  
10  
VGS  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
VGS  
15V  
TOP  
TOP  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM 4.5V  
4.5V  
4.5V  
20us PULSE WIDTH  
20us PULSE WIDTH  
T = 25 oC  
J
T = 175oC  
J
1
0.1  
1
0.1  
1
10  
100  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
36A  
=
I
D
100  
T = 25oC  
J
T = 175oC  
J
10  
V
= 10V  
GS  
1
4.0  
5.0  
V
6.0  
7.0  
8.0  
9.0  
10.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
T , Junction Temperature (o C)  
, Gate-to-Source Voltage (V)  
GS  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFP150N  
3500  
3000  
2500  
2000  
1500  
1000  
500  
20  
16  
12  
8
V
C
= 0V,  
f = 1MHz  
C
I
D
= 22A  
GS  
= C + C  
SHORTED  
ds  
V
V
V
= 80V  
= 50V  
= 20V  
iss  
gs  
gd ,  
gd  
DS  
DS  
DS  
C
= C  
gd  
rss  
C
= C + C  
oss  
ds  
C
iss  
C
C
oss  
rss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
0
10  
100  
0
20  
40  
60  
80 100  
120  
V
, Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
1000  
1000  
100  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
100  
10  
1
100us  
1ms  
1
10ms  
T
T
= 25o C  
= 175o C  
C
J
V
= 0 V  
Single Pulse  
GS  
0.1  
0.2  
0.4  
V
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
1000  
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRFP150N  
50  
40  
30  
20  
10  
0
R D  
VDS  
V GS  
10V  
D.U.T.  
RG  
+VDD  
-
Pulse Width £1µs  
Duty Factor £ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
, Case Temperature ( C)  
T
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
P
DM  
0.10  
0.05  
0.1  
t
1
t
2
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFP150N  
1000  
800  
600  
400  
200  
0
I
D
TOP  
9.0A  
16A  
BOTTOM 22A  
15V  
DRIVER  
L
V
DS  
D.U.T  
AS  
R
G
+
V
D D  
-
I
A
20V  
t
0.01  
Ω
p
Fig 12a. Unclamped Inductive Test Circuit  
25  
50  
75  
100  
125  
150  
175  
Starting T , Junction Temperature o( C)  
V
(BR )D SS  
J
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
Q
G
+
10 V  
V
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13a. Basic Gate Charge Waveform  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRFP150N  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
· Low Stray Inductance  
· Ground Plane  
· Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
· dv/dt controlled by RG  
+
-
· Driver same type as D.U.T.  
· ISD controlled by Duty Factor "D"  
· D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFETS  
www.irf.com  
7
IRFP150N  
Package Outline  
TO-247AC Outline  
Dimensions are shown in millimeters (inches)  
- D -  
3.65 (.143)  
3.55 (.140)  
5.30 (.209)  
4.70 (.185)  
15.90 (.626)  
15.30 (.602)  
0.25 (.010)  
D
B
M
M
2.50 (.089)  
- B -  
- A -  
1.50 (.059)  
5.50 (.217)  
4
20.30 (.800)  
19.70 (.775)  
NOTES:  
5.50 (.217)  
4.50 (.177)  
2X  
1
DIMENSIONING & TO LERANCING  
P ER ANSI Y14.5M , 1982.  
CONTROLLING DIMENSIO N : INCH.  
CONFORMS TO JEDEC OUTLINE  
TO-247-AC.  
1
2
3
2
3
- C -  
14.80 (.583)  
14.20 (.559)  
4.30 (.170)  
3.70 (.145)  
LEAD AS SIGNMENTS  
2.40 (.094)  
2.00 (.079)  
2X  
0.80 (.031)  
0.40 (.016)  
1.40 (.056)  
1.00 (.039)  
3X  
3X  
1 - GATE  
2 - DRAIN  
3 - SOURCE  
4 - DRAIN  
2.60 (.102)  
2.20 (.087)  
0.25 (.010)  
C
A
S
M
5.45 (.215)  
3.40 (.133)  
3.00 (.118)  
2X  
Part Marking Information  
TO-247AC  
EXAMPLE : THIS IS AN IRFPE30  
W ITH ASSEMBLY  
A
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 3A1Q  
IRFPE30  
3A1Q 9302  
DATE CODE  
(YYW W )  
ASSEMBLY  
LOT  
CODE  
YY  
= YEAR  
W W W EEK  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 10/98  
8
www.irf.com  

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