IRFP150V [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRFP150V
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总8页 (文件大小：521K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 94459A

IRFP150V

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 100V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 24mΩ

l Fully Avalanche Rated

I_D= 47A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications

wherehigherpowerlevelsprecludetheuseofTO-220devices. TheTO-247

is similar but superior to the earlier TO-218 packcage because of its isolated

mounting hole.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

230

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.91

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.8

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.24

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.1

–––

°C/W

www.irf.com

02/03/03

IRFP150V

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

100 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 24

mΩ V_GS= 10V, I_D=28A

2.0

––– 4.0

––– –––

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 28A

V_DS= 100V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Forward Transconductance

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 130

––– ––– 26

––– ––– 43

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= 28A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 80V

V_GS= 10V, See Fig. 6 and 13

–––

12 –––

58 –––

45 –––

47 –––

V_DD= 50V

I_D= 28A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 2.5Ω

V_GS= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

7.5

C_iss

C_oss

C_rss

E_AS

Input Capacitance

––– 3130 –––

––– 410 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Single Pulse Avalanche Energy

–––

72 –––

ƒ = 1.0MHz, See Fig. 5

––– 1060ꢀ280 mJ I_AS= 28A, L = 0.70mH

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

230

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– 1.2

––– 140 220

T_J= 25°C, I_S= 28A, V_GS= 0V

T_J= 25°C, I_F= 28A

Q_rr

t_on

––– 670 1010 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Starting T_J= 25°C, L = 0.70mH, R_G= 25Ω,

I_AS= 28A, V_GS=10V (See Figure 12).

Pulse width ≤ 400µs; duty cycle ≤ 2%.

ꢀ This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to T_J= 175°C .

I_SD≤ 28A, di/dt ≤ 380A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C.

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IRFP150V

1000

100

1000

100

VGS

16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

3.5V

VGS

16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

3.5V

TOP

BOTTOM

3.5V

20µs PULSE WIDTH

Tj = 25°C

20µs PULSE WIDTH

Tj = 175°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

1000.00

57A

2.5

2.0

1.5

1.0

0.5

0.0

100.00

10.00

1.00

T = 175°C

T = 25°C

= 15V

20µs PULSE WIDTH

= 10V

0.10

-60 -40 -20

20 40 60 80 100 120 140 160 180

3.0

4.0

5.0

6.0

7.0

8.0

9.0

T , Junction Temperature

( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFP150V

100000

= 28A

= 0V,

f = 1 MHZ

= 80V

= 50V

= 20V

= C + C

SHORTED

iss

= C

rss

= C + C

10000

1000

100

oss

ds gd

Ciss

Coss

Crss

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.00

100.00

10.00

1.00

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

T = 175°C

100µsec

1msec

= 25°C

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.10

0.1

0.0

0.5

1.0

1.5

2.0

100

1000

, Source-toDrain Voltage (V)

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRFP150V

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

SINGLE PULSE

0.01

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP150V

550

440

330

220

110

15V

TOP

11A

20A

28A

BOTTOM

DRIVER

D.U.T

V0_GV_S

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

( C)

Starting T , Junction Temperature

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

V_GS

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRFP150V

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

]

[

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET^®power MOSFETs

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IRFP150V

TO - 247 Package Outline

Dimensions are shown in millimeters (inches)

- D -

3.65 (.143)

3.55 (.140)

5.30 (.209)

4.70 (.185)

15.90 (.626)

15.30 (.602)

- B -

0.25 (.010)

2.50 (.089)

- A -

1.50 (.059)

5.50 (.217)

20.30 (.800)

19.70 (.775)

NOTES:

5.50 (.217)

4.50 (.177)

1 DIMENSIONING & TOLERANCING

PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH.

3 CONFORMS TO JEDEC OUTLINE

TO-247-AC.

- C -

14.80 (.583)

14.20 (.559)

4.30 (.170)

3.70 (.145)

LEAD ASSIGNMENTS

2.40 (.094)

2.00 (.079)

0.80 (.031)

0.40 (.016)

1.40 (.056)

1.00 (.039)

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

2.60 (.102)

2.20 (.087)

0.25 (.010)

5.45 (.215)

3.40 (.133)

3.00 (.118)

TO-247 package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/03

www.irf.com

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