IRFP3006 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFP3006 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP3006PbF
VDSS
60V
RDS(on) typ.
2.1m
max.
2.5m
270A
S
D
ID (Silicon Limited)
ID (Package Limited)
G
195A
TO-247AC
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
G
D
S
Gate
Drain
Source
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Base Part Number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFP3006PbF
TO-247
Tube
25
IRFP3006PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
270
190
195
A
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
1080
375
Maximum Power Dissipation
PD @TC = 25°C
W
W/°C
V
Linear Derating Factor
2.5
Gate-to-Source Voltage
± 20
10
VGS
Peak Diode Recovery
dv/dt
TJ
V/ns
Operating Junction and
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
TSTG
°C
300
Mounting torque, 6-32 or M3 screw
10lbf
in (1.1N
m)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
320
mJ
A
IAR
Avalanche Current
See Fig. 14, 15, 22a, 22b
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
RJC
Parameter
Typ.
–––
0.24
–––
Max.
0.4
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
RCS
RJA
–––
40
°C/W
1
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
––– 2.1
2.0 ––– 4.0
––– ––– 20
––– ––– 250
2.5
VGS = 10V, ID = 170A
VDS = VGS, ID = 250µA
µA VDS = 60V, VGS = 0V
m
V
Drain-to-Source Leakage Current
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
––– ––– 100 nA VGS = 20V
––– ––– -100
––– 2.0 –––
VGS = -20V
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 170A
ID = 170A
280 ––– –––
––– 200 300
S
V
DS =30V
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
37
60
–––
–––
nC
VGS = 10V
ID = 170A, VDS =0V, VGS = 10V
––– 140 –––
––– 16 –––
VDD = 39V
ID = 170A
RG = 2.7
VGS = 10V
VGS = 0V
––– 182 –––
––– 118 –––
––– 189 –––
––– 8970 –––
––– 1020 –––
––– 534 –––
––– 1480 –––
ns
VDS = 50V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
See Fig. 11
pF
Coss eff. (ER) Effective Output Capacitance
(Energy Related)
Coss eff. (TR) Effective Output Capacitance
(Time Related)
––– 1920 –––
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 257
A
––– ––– 1028
showing the
G
integral reverse
p-n junction diode.
ISM
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.3
V
TJ = 25°C, IS = 170A, VGS = 0V
–––
–––
–––
–––
44
48
63
77
–––
–––
ns TJ = 25°C
TJ = 125°C
VR = 51V,
Qrr
Reverse Recovery Charge
Reverse Recovery Current
––– nC TJ = 25°C
–––
IF = 170A
di/dt = 100A/µs
TJ = 125°C
TJ = 25°C
IRRM
––– 2.4 –––
A
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. Junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50, IAS = 170A,VGS =10V. Part not Recommended for use above
this value.
ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
* All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet.
2
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
TOP
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
BOTTOM
3.5V
3.5V
1
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
I
= 170A
D
V
= 10V
GS
100
10
1
T = 175°C
J
T
= 25°C
J
V
= 25V
DS
60µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
16000
12000
8000
4000
0
16
V
C
= 0V,
f = 1 MHZ
GS
I
= 170A
= C + C , C SHORTED
D
iss
gs
gd ds
V
V
= 48V
= 30V
C
C
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
12
8
C
iss
4
C
oss
C
rss
0
0
40
Q
80
120 160 200 240 280
1
10
100
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
LIMITED BY PACKAGE
1msec
T
J
= 25°C
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.6
0.1
0.1
0.0
0.4
0.8
1.2
2.0
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
DS
SD
Fig 7. Typical Source-to-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
80
75
70
65
60
55
300
I
= 5mA
D
LIMITED BY PACKAGE
250
200
150
100
50
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
T
, Junction Temperature (°C)
C
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
1400
1200
1000
800
600
400
200
0
I
D
TOP
20A
27A
170A
1.5
1.0
0.5
0.0
BOTTOM
0
10
V
20
30
40
50
60
25
50
75
100
125
150
175
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 11. Typical Coss Stored Energy
www.irf.com © 2013 International Rectifier
Fig 12. Maximum Avalanche Energy vs. Drain Current
4
September 06, 2013
IRFP3006PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature
far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 170A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
J
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
20
16
12
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
I
= 112A
F
V
T
= 51V
R
4
= 125°C
= 25°C
J
J
T
0
100
200
300
400
500
600
700
800
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
di / dt - (A / µs)
f
T
J
Fig. 17 Typical Recovery Current vs. dif/dt
Fig. 16 Threshold Voltage vs. Temperature
700
20
600
500
400
300
200
100
0
16
12
8
I
= 112A
= 51V
I
= 170A
= 51V
F
F
V
V
R
R
4
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
J
T
T
J
J
0
100
200
300
400
500
600
700
800
100
200
300
400
500
600
700
800
di / dt - (A / µs)
di / dt - (A / µs)
f
f
Fig 19. Typical Stored Charge vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
700
600
500
400
300
200
100
0
I
= 170A
F
V
= 51V
R
T
= 125°C
= 25°C
J
J
T
100
200
300
400
500
600
700
800
di / dt - (A / µs)
f
Fig 20. Typical Stored Charge vs. dif/dt
© 2013 International Rectifier
6
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September 06, 2013
IRFP3006PbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2013 International Rectifier
September 06, 2013
IRFP3006PbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F )††
N/A
Moisture Sensitivity Level
TO-247AC
RoHS compliant
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Internaꢀonal Recꢀfier, please visit hꢁp://www.irf.com/whoto‐call/
9
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© 2013 International Rectifier
September 06, 2013
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
IRFP3077
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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