IRFP4332 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFP4332 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97100B
IRFP4332PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
VDS min
250
300
29
V
V
m
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
TJ max
l
175
°C
l
l
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
D
D
l
Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
S
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
D
G
G
l
and Reliability
S
TO-247AC
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Source Voltage
Units
V
A
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
57
40
230
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
120
Repetitive Peak Current
360
Power Dissipation
W
180
Power Dissipation
2.4
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
0.42
–––
40
Units
Junction-to-Case
Rθ
Rθ
–––
0.24
–––
JC
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
CS
RθJA
Notes through are on page 9
www.irf.com
1
12/15/09
IRFP4332PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
170
29
–––
V
Reference to 25°C, I = 1mA
V
/ T
∆
J
∆Β
––– mV/°C
D
DSS
VGS = 10V, ID = 35A
RDS(on)
VGS(th)
33
mΩ
V
V
DS = VGS, ID = 250µA
DS = 250V, VGS = 0V
–––
-14
–––
–––
–––
–––
–––
99
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
100
–––
–––
100
––– mV/°C
V
20
200
100
-100
–––
150
–––
–––
µA
µA
nA
VDS = 250V, VGS = 0V, TJ = 125°C
GS = 20V
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 25V, ID = 35A
VDD = 125V, ID = 35A, VGS = 10V
gfs
Qg
Qgd
tst
S
nC
Gate-to-Drain Charge
35
VDD = 200V, VGS = 15V, RG= 4.7Ω
Shoot Through Blocking Time
–––
ns
µJ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
–––
–––
520
920
–––
–––
EPULSE
Energy per Pulse
VDS = 200V, RG= 5.1Ω, TJ = 100°C
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 5860 –––
VDS = 25V
Output Capacitance
–––
–––
–––
–––
530
130
360
5.0
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 200V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
LS
G
Internal Source Inductance
–––
13
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
300
–––
Max.
210
36
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
EAR
VDS(Avalanche)
IAS
–––
35
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
ISM
MOSFET symbol
Continuous Source Current
–––
–––
57
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
230
TJ = 25°C, IS = 35A, VGS = 0V
TJ = 25°C, IF = 35A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
190
1.3
V
290
ns
nC
Qrr
820 1230
2
www.irf.com
IRFP4332PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
BOTTOM
5.5V
5.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 175°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 35A
D
V
= 10V
GS
100
10
T
= 175°C
J
T
= 25°C
J
1
0.1
0.01
V
= 25V
DS
60µs PULSE WIDTH
≤
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
100°C
25°C
800
800
600
400
200
0
25°C
600
400
200
0
100
110
120
130
140
150
160
170
150
160
170
180
190
200
I
Peak Drain Current (A)
V
Drain-to -Source Voltage (V)
D,
DS,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
www.irf.com
3
IRFP4332PbF
1000
100
10
1400
L = 220nH
1200
C= 0.3µF
C= 0.2µF
C= 0.1µF
1000
800
600
400
200
0
T
= 175°C
J
1
T
= 25°C
0.8
J
V
= 0V
GS
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.0
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
I
= 35A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 200V
= 125V
= 50V
DS
DS
DS
C
= C
rss
gd
16
12
8
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
4
0
0
40
80
120
160
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
www.irf.com
IRFP4332PbF
1000
800
600
400
200
0
0.40
0.30
0.20
0.10
0.00
I
D
I
= 35A
D
TOP
8.3A
13A
35A
BOTTOM
T
= 125°C
= 25°C
J
T
J
5
6
7
8
9
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
180
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
140
4.0
I
= 250µA
120
100
80
60
40
20
0
D
3.0
2.0
1.0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.20
R1
R1
R2
R2
R3
R3
0.10
0.05
τι
(sec)
Ri (°C/W)
τ
J τJ
τ
τ
Cτ
0.069565 0.000074
0.172464 0.001546
0.178261 0.019117
τ
1 τ1
τ
2 τ2
3 τ3
0.01
0.02
0.01
Ci= τi/Ri
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFP4332PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
.2µF
Vgs
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
www.irf.com
IRFP4332PbF
A
PULSE A
PULSE B
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
www.irf.com
7
IRFP4332PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRFP4332PbF
TO-247AC Part Marking Information
TO-247AC Lead Option- 203
All dimensions in millimeters (inches)
Lead Assignments
1- Gate
2- Drain
3- Source
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.35mH, RG = 25Ω, IAS = 35A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.
Applicable to Sustain and Energy Recovery applications.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2009
www.irf.com
9
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
IRFP4368
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明