IRFP460P [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A); 功率MOSFET （ VDSS = 500V ， RDS（ON） = 0.27ohm ，ID = 20A ）
| 型号： | IRFP460P |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93946A
IRFP460P
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 500V
l Ease of Paralleling
l Simple Drive Requirements
l Solder Plated for Reflowing
RDS(on) = 0.27Ω
G
ID = 20A
Description
S
Third Generation HEXFET®s from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
TheTO-247packageispreferredfor commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance
between pins to meet the requirements of most safety
specifications.
TO-247AC
The solder plated version of the TO-247 allows the reflow
solderingof thepackageheatsink toa substratematerial.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
20
13
A
80
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
960
mJ
A
20
28
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
3.5
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Maximum Reflow Temperature
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183 °C
should not exceed 100s)
°C
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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01/17/01
IRFP460P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.27
Ω
V
S
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 50V, ID =12A
VDS = 500V, VGS = 0V
Gate Threshold Voltage
2.0
13
––– 4.0
Forward Transconductance
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 210
––– ––– 29
––– ––– 110
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
VGS =-20V
ID = 20A
IGSS
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
18 –––
59 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 110 –––
RG = 4.3Ω
–––
58 –––
RD = 13Ω,See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
5.0
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
nH
G
–––
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 4200 –––
––– 870 –––
––– 350 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
20
80
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoverCharge
Forward Turn-On Time
––– ––– 1.8
––– 570 860
––– 5.7 8.6
V
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 20A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =4.8mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 20A. (See Figure 12)
2
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IRFP460P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFP460P
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFP460P
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460P
1 5V
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
10 V
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP460P
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET®s
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7
IRFP460P
Package Outline
TO-247AC
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
N O T E S :
5.50 (.217)
4.50 (.177)
2X
1
D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14 .5 M , 19 82 .
C O N TR O L LIN G D IM E N S IO N : IN C H .
C O N F O R M S TO JE D E C O U TL IN E
T O -24 7-A C .
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LE A D A S S IG N M E N T S
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1
2
3
4
-
-
-
-
G A T E
D R A IN
S O U R C E
D R A IN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Part Marking Information
TO-247AC
E X A M P L E
:
TH IS IS AN IR F P E 30
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
A
P AR T N U M B E R
IN TE R N A TIO N A L
R E C T IF IE R
L O G O
IR F P E 3 0
3 A 1 Q 9 3 0 2
D A TE C O D E
(Y YW W )
A S S E M B L Y
L O T
C O D E
YY
= YE A R
W W W E E K
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
8
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