IRFP4768 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFP4768 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP4768PbF
HEXFET® Power MOSFET
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
VDSS
RDS(on) typ.
max
250V
14.5m
17.5m
93A
Hard Switched and High Frequency Circuits
ID
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-247AC
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number Package Type
Orderable Part Number
Quantity
IRFP4768PbF
TO-247AC
Tube
25
IRFP4768PbF
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
93
66
370
520
3.4
± 20
24
A
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery dv/dt
V/ns
TJ
TSTG
Operating Junction and
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
770
Single Pulse Avalanche Energy
mJ
A
IAR
Avalanche Current
See Fig. 14, 15, 22a, 22b
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Parameter
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
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IRFP4768PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
250 ––– –––
––– 0.20 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
––– 14.5 17.5
3.0 ––– 5.0
V
GS = 10V, ID = 56A
m
V
VGS(th)
VDS = VGS, ID = 250µA
––– –––
20
V
V
V
V
DS = 250 V, VGS = 0V
DS = 250V,VGS = 0V,TJ =125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 250
––– ––– 100
––– ––– -100
––– 0.71 –––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
nA
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
100 ––– –––
––– 180 270
S
VDS = 50V, ID =56A
ID = 56A
VDS = 125V
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
–––
–––
52
72
–––
–––
nC
VGS = 10V
––– 108 –––
––– 36 –––
––– 160 –––
––– 57 –––
––– 110 –––
––– 10880 –––
––– 700 –––
VDD = 163V
ID = 56A
RG= 1.0
VGS = 10V
VGS = 0V
ns
Output Capacitance
VDS = 50V
Crss
Reverse Transfer Capacitance
––– 210 –––
ƒ = 1.0MHz, See Fig. 5
pF
Coss eff.(ER)
Coss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related) ––– 510 –––
VGS = 0V, VDS = 0V to 200V
VGS = 0V, VDS = 0V to 200V
Output Capacitance (Time Related)
––– 830 –––
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
––– –––
93
G
A
ISM
––– ––– 370
––– ––– 1.3
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 56A,VGS = 0V
––– 180 –––
––– 200 –––
––– 1480 –––
––– 2260 –––
TJ = 25°C
VDD = 200V
IF = 56A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
nC
A
TJ = 125°C
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
16
–––
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax starting TJ = 25°C, L = 0.50mH, RG = 25, IAS = 56A, VGS =10V. Part not recommended for
use above this value.
ISD 56A, di/dt 950A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
Ris measured at TJ approximately 90°C
RJCvalue shown is at time zero.
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IRFP4768PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
4.5V
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 56A
D
V
= 10V
GS
100
T
= 175°C
J
T
= 25°C
= 50V
J
10
1
V
DS
60µs PULSE WIDTH
0.1
3
4
5
6
7
8
-60 -40 -20
T
0
20 40 60 80 100120140160180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
I
= 56A
V
= 0V,
f = 1 MHZ
D
GS
C
C
C
= C + C , C
SHORTED
12.0
10.0
8.0
V
V
V
= 200V
= 125V
= 50V
iss
gs
gd
ds
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
10000
1000
100
C
oss
6.0
C
rss
4.0
2.0
0.0
0
30
60
90 120 150 180 210 240
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
DS
, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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IRFP4768PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
= 175°C
J
1msec
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
GS
= 0V
0.1
1
0.0
0.5
1.0
1.5
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
320
100
Id = 5mA
80
60
40
20
0
300
280
260
240
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
25
50
75
100
125
150
175
T
J
T
, Case Temperature (°C)
C
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
20.0
18.0
16.0
14.0
12.0
10.0
8.0
3200
I
D
2800
2400
2000
1600
1200
800
TOP
12A
17A
BOTTOM 56A
6.0
4.0
2.0
400
0.0
0
-50
0
50
100 150 200 250 300
25
50
75
100
125
150
175
V
Drain-to-Source Voltage (V)
DS,
Starting T , Junction Temperature (°C)
J
Fig 11. Typical Coss Stored Energy
Fig 12. Maximum Avalanche Energy vs. Drain Current
2016-12-12
4
IRFP4768PbF
1
0.1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
0.0634
0.1109
0.1148
I (sec)
0.000278
0.005836
0.053606
0.01
0.02
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse
800
700
600
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far
in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
TOP
BOTTOM 1.0% Duty Cycle
= 56A
Single Pulse
I
D
4.
PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6.
Iav = Allowable avalanche current.
7. T=Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
E
AS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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IRFP4768PbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
70
60
50
40
30
20
10
I
= 37A
F
V
= 200V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T
, Temperature ( °C )
di /dt (A/µs)
J
F
Fig 16. Threshold Voltage vs. Temperature
Fig 17. Typical Recovery Current vs. dif/dt
6000
90
I
= 37A
I
= 56A
F
F
80
70
60
50
40
30
20
10
V
= 200V
V
= 200V
R
R
5000
4000
3000
2000
1000
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Stored Charge vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
8000
I
= 56A
F
7000
6000
5000
4000
3000
2000
1000
V
= 200V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 20. Typical Stored Charge vs. dif/dt
6
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IRFP4768PbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
Fig 24a. Gate Charge Test Circuit
7
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IRFP4768PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFP4768PbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
TO-247AC
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo-all pages
Corrected error on figure 9 on page 4.
Added disclaimer on last page.
12/12/2016
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
9
2016-12-12
相关型号：
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The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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