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IRFP9140NPBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRFP9140NPBF
型号： IRFP9140NPBF
厂家： Infineon    Infineon
描述：

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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PD - 95665  
IRFP9140NPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l P-Channel  
D
VDSS = -100V  
l Fast Switching  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 0.117Ω  
G
ID = -23A  
S
Description  
FifthGenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-247 package is preferred for commercial-  
industrial applications where higher power levels  
preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package  
because of its isolated mounting hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
-23  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current ꢀ  
-16  
A
-76  
PD @TC = 25°C  
Power Dissipation  
140  
W
W/°C  
V
Linear Derating Factor  
0.91  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
430  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
-11  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
14  
mJ  
V/ns  
-5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
6-32  
Mounting  
torque,  
or  
M
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.1  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
7/30/04  
IRFP9140NPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-100 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mAꢀ  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 0.117  
-2.0 ––– -4.0  
Ω
V
S
VGS = -10V, ID = -13A „  
VDS = VGS, ID = -250µA  
VDS = -50V, ID = 11Aꢀ  
Forward Transconductance  
5.3  
––– –––  
––– ––– -25  
––– ––– -250  
––– ––– 100  
––– ––– -100  
––– ––– 97  
––– ––– 15  
––– ––– 51  
V
DS = -100V, VGS = 0V  
VDS = -80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = -20V  
ID = -11A  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = -80V  
VGS = -10V, See Fig. 6 and 13 „ꢀ  
–––  
–––  
–––  
–––  
15 –––  
67 –––  
51 –––  
51 –––  
VDD = -50V  
ID = -11A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 5.1Ω  
RD = 4.2Ω, See Fig. 10 „ꢀ  
Between lead,  
6mm (0.25in.)  
D
5.0  
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
–––  
–––  
nH  
pF  
G
from package  
13  
and center of die contact  
VGS = 0V  
S
Ciss  
Coss  
Crss  
Input Capacitance  
––– 1300 –––  
––– 400 –––  
––– 240 –––  
Output Capacitance  
VDS = -25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5ꢀ  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
-23  
-76  
––– –––  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode) ꢀ  
integral reverse  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– -1.3  
––– 150 220  
V
TJ = 25°C, IS = -13A, VGS = 0V „  
ns  
TJ = 25°C, IF = -11A  
Qrr  
ton  
––– 830 1200 µC di/dt = -100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
 Repetitive rating; pulse width limited by  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
ꢀ Uses IRF9540N data and test conditions  
max. junction temperature. ( See fig. 11 )  
‚ Starting TJ = 25°C, L = 7.1mH  
RG = 25Ω, IAS = -11A. (See Figure 12)  
ƒ ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 175°C  
,
IRFP9140NPbF  
100  
10  
1
100  
10  
1
VGS  
- 15V  
- 10V  
- 8.0V  
- 7.0V  
- 6.0V  
- 5.5V  
- 5.0V  
VGS  
TOP  
TOP  
- 15V  
- 10V  
- 8.0V  
- 7.0V  
- 6.0V  
- 5.5V  
- 5.0V  
BOTTOM - 4.5V  
BOTTOM - 4.5V  
-4.5V  
-4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
T
C
= 175°C  
T
c
= 25°C  
A
A
100  
0.1  
1
10  
100  
0.1  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
2.5  
I
= -19A  
D
T = 25°C  
J
2.0  
1.5  
1.0  
0.5  
0.0  
T = 175°C  
J
10  
1
VDS = -25V  
20µs PULSE WIDTH  
V
= -10V  
GS  
0.1  
A
10 A  
4
5
6
7
8
9
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
-VGS , Gate-to-Source Voltage (V)  
T , Junction Temperature (°C)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
IRFP9140NPbF  
3000  
20  
16  
12  
8
V
C
C
C
= 0V,  
f = 1MHz  
I
= -11A  
GS  
iss  
rss  
oss  
D
= C + C  
,
C
SHORTED  
gs  
gd  
ds  
V
V
V
= -80V  
= -50V  
= -20V  
DS  
DS  
DS  
= C  
gd  
2500  
2000  
1500  
1000  
500  
= C + C  
ds  
gd  
C
iss  
C
C
oss  
rss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
0
A
A
1
10  
100  
0
20  
40  
60  
80  
100  
-V , Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
10  
1
1000  
100  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
T = 175°C  
J
T = 25°C  
J
100µs  
1ms  
T
= 25°C  
= 175°C  
C
10ms  
T
J
V
= 0V  
Single Pulse  
GS  
A
0.1  
1
A
1000  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
-V , Source-to-Drain Voltage (V)  
DS  
SD  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
IRFP9140NPbF  
25  
20  
15  
10  
5
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
-10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
0
25  
50  
75  
100  
125  
150  
175  
°
T , Case Temperature ( C)  
C
90%  
Fig 9. Maximum Drain Current Vs.  
V
DS  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
P
2
DM  
0.10  
0.05  
0.1  
t
1
0.02  
0.01  
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
IRFP9140NPbF  
1200  
1000  
800  
600  
400  
200  
0
L
V
I
DS  
D
TOP  
-4.7A  
-8.1A  
BOTTOM -11A  
D.U.T  
AS  
R
G
V
DD  
A
I
DRIVER  
-20V  
0.01  
Ω
t
p
15V  
Fig 12a. Unclamped Inductive Test Circuit  
A
175  
25  
50  
75  
100  
125  
150  
I
AS  
Starting T , Junction Temperature (°C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
t
p
V
(BR)DSS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
12V  
.3µF  
-10V  
-
V
+
DS  
Q
Q
GD  
D.U.T.  
GS  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
IRFP9140NPbF  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T*  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
+
-
VDD  
VGS  
* Reverse Polarity of D.U.T for P-Channel  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
[
=10V ] ***  
V
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
[
V
]
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
[
]
I
SD  
Ripple ≤ 5%  
*** VGS = 5.0V for Logic Level and 3V Drive Devices  
Fig 14. For P-Channel HEXFETS  
IRFP9140NPbF  
TO-247AC Package Outline Dimensions are shown in millimeters (inches)  
TO-247AC Part Marking Information  
EXAMPLE: THIS IS AN IRFPE30  
WITH AS SEMBLY  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 5657  
IRFPE30  
035H  
57  
AS S EMBLED ON WW 35, 2000  
IN THE ASSEMBLY LINE "H"  
56  
DATE CODE  
YEAR 0 = 2000  
WE EK 35  
Note: "P" in assembly line  
position indicates "Lead-Free"  
ASSEMBLY  
LOT CODE  
LINE H  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 07/04  
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

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