IRFPC60LC-P [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFPC60LC-P |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 99438
IRFPC60LC-P
HEXFET® Power MOSFET
D
l Ultra Low Gate Charge
VDSS = 600V
l Reduced Gate Drive Requirement
l Enhanced 30V Vgs Rating
l Reduced Ciss, Coss, Crss
l Isolated Central Mounting Hole
l Dynamic dv/dt Rated
RDS(on) = 0.40Ω
G
ID = 16A
S
l Repetitive Avalanche Rated
Description
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs
achieve significantly lower gate charge over conventional MOSFETs. Utilizing
advanced Hexfet technology the device improvements allow for reduced gate
drive requirements, faster switching speeds and increased total system savings.
Thesedeviceimprovementscombinedwiththeprovenruggednessandreliability
of HEXFETs offer the designer a new standard in power transistors for switching
applications.
Surface Mountable
TO-247
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
16
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
10
A
64
280
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
2.2
VGS
EAS
IAR
Gate-to-Source Voltage
±30
Single Pulse Avalanche Energy
Avalanche Current
1000
16
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
28
mJ
V/ns
3.0
-55 to + 150
TSTG
Storage Temperature Range
Max Reflow Temperature
°C
225
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.24
Max.
0.45
––––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
––––
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1
04/25/02
IRFPC60LC-P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
600 ––– –––
––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.40
2.0 ––– 4.0
11 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 120
––– ––– 29
––– ––– 48
––– 17 –––
––– 57 –––
––– 43 –––
––– 38 –––
Ω
V
S
VGS = 10V, ID = 9.6A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 9.6A
VDS = 600V, VGS = 0V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
V
DS = 480V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 360V
VGS = 10V, See Fig. 6 and 13
VDD = 300V
ID = 16A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 18Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 5.0 –––
––– 13 –––
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 3500 –––
––– 400 –––
––– 39 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 16
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 64
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 650 980
––– 6.0 9.0
V
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 16A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 7.2mH
RG = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFPC60LC-P
1 00
10
1 00
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
1
0.1
0.01
0.1
0.01
4.5V
20µs PULSE W IDTH
20µs P ULS E W IDTH
T
= 25°C
C
T
= 150°C
C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
I
= 16A
D
T
= 150°C
J
1
T
= 25°C
J
0.1
0.01
V
= 100V
D S
20µs PULS E W ID TH
V
= 10V
G S
-60 -40 -20
0
20
40
60
80 100 120 140 160
4
5
6
7
8
9
10
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFPC60LC-P
20
16
12
8
7000
I
= 16A
D
V
C
C
C
= 0V,
f = 1MH z
G S
iss
rss
oss
= C
= C
= C
+ C
+ C
,
C
S HORTED
gs
gd
ds
gd
ds
6000
5000
4000
3000
2000
1000
0
V
V
V
= 360V
= 240V
= 120V
gd
D S
D S
D S
C
iss
4
C
C
oss
rss
FOR TE ST CIRC UIT
S EE FIG URE 13
0
0
30
G
60
90
120
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
1000
100
10
O PER ATIO N IN TH IS AREA LIM ITE D
B Y R
D S(on)
10µs
10
T
= 150°C
J
T
= 25°C
100µs
1m s
J
T
T
= 25°C
= 150°C
C
J
10m s
1000
V
= 0V
G S
Single Pulse
1
1
0
0.4
0.8
1.2
1.6
2
1
10
100
100 00
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
D S
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFPC60LC-P
RD
VDS
VGS
16
12
8
D.U.T.
RG
+ VDD
-
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
4
0
10%
25
50
75
100
125
150
V
GS
T
, Case Temperature (°C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D
= 0.5 0
0.20
0.1
0.1 0
0.0 5
P
DM
0.02
0.01
0.01
t
1
S IN G LE P UL SE
t
(T H E R M AL R E S P O N S E )
2
N o tes :
1 . Du ty fa ctor D
=
t
/ t
2
1
2 . Pe ak
0 .1
T
=
P
x
Z
+ T
C
D M
J
th JC
1
0.001
0.00001
0.0001
0.001
0.01
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFPC60LC-P
L
V
DS
D.U.T.
2400
2000
1600
1200
800
I
D
R
+
-
G
TOP
7.2A
10A
V
DD
B OTTO M 16A
I
10 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
400
V
= 50V
50
DD
V
0
DS
25
75
100
125
150
Starting T , Juntion Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFPC60LC-P
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFPC60LC-P
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D
-
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
1.50 (.059)
- B
-
- A
-
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C
-
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
1 - GATE
3X
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
2X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
E X A M P L E
:
TH IS IS AN IR F P E 30
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
A
P AR T N U M B E R
IN TE R N A TIO N A L
R E C T IF IE R
L O G O
IR F P E 3 0
3 A 1 Q 9 3 0 2
D A TE C O D E
(Y YW W )
A S S E M B L Y
L O T
C O D E
YY
= YE A R
W W W E E K
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
8
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相关型号：
IRFPC60LC-PPBF
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
INFINEON
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